, Volume 46, Issue 9, pp 1126–1134 | Cite as

Velocity-direction dependent transmission coefficient of electron through potential barrier grown on anisotropic semiconductor

  • Chun-Nan Chen
  • Sheng-Hsiung Chang
  • Wei-Long Su
  • Jen-Yi Jen
  • Yiming Li
Spectroscopy, Interaction with Radiation


In contrast to the usual wavevector dependent transition coefficients, the velocity-direction dependent transition coefficients of an incident electron are calculated. Through a potential barrier grown on anisotropic semiconductors, the transition coefficients of an incident electron are calculated in all valleys and incident-directions. In the anisotropic semiconductor, the mathematical expressions of the electron wavevector are also derived in the framework of the incident-angle and incident-energy parameters.


Polar Angle Transmission Coefficient Anisotropic Material Incident Electron Conduction Band Valley 
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Copyright information

© Pleiades Publishing, Ltd. 2012

Authors and Affiliations

  • Chun-Nan Chen
    • 1
  • Sheng-Hsiung Chang
    • 2
  • Wei-Long Su
    • 3
  • Jen-Yi Jen
    • 1
  • Yiming Li
    • 4
  1. 1.Quantum Engineering Laboratory, Department of PhysicsTamkang UniversityTamsui, TaipeiTaiwan
  2. 2.Department of Optoelectronic EngineeringFar-East UniversityHsin-Shih Town, TainanTaiwan
  3. 3.Department of Digital Mulitimedia TechnologyLee-Ming Institute of TechnologyTai-Shan, TaipeiTaiwan
  4. 4.Department of Electrical EngineeringNational Chiao Tung UniversityHsinchuTaiwan

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