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Semiconductors

, Volume 46, Issue 5, pp 647–654 | Cite as

Effects of the lateral ordering of self-assembled SiGe nanoislands grown on strained Si1 − x Ge x buffer layers

  • V. V. Strelchuk
  • A. S. NikolenkoEmail author
  • P. M. Lytvyn
  • V. P. Kladko
  • A. I. Gudymenko
  • M. Ya. Valakh
  • Z. F. Krasilnik
  • D. N. Lobanov
  • A. V. Novikov
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Abstract

Atomic-force microscopy, micro-Raman spectroscopy, and high resolution X-ray diffraction are applied to study the spatial ordering in single layers of SiGe nanoislands grown on a strained Si1 − x Ge x buffer sublayer. It is shown that, apart from stimulating the spatial ordering of nanoislands, the introduction of a Si1 − x Ge x sublayer leads to an enhanced role for interdiffusion processes. An unusually high increase in the volume of nanoislands in the process of the epitaxy is related to the anomalously strong diffusion from the buffer sublayer into the islands that is induced by nonuniform fields of elastic strains. The anisotropy of the islands shape and spatial ordering is discussed in terms of the anisotropy of the diffusion processes in spatially nonuniform fields of elastic strains.

Keywords

Buffer Layer SiGe Layer Nonuniform Field Strong Diffusion Interdiffusion Process 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Pleiades Publishing, Ltd. 2012

Authors and Affiliations

  • V. V. Strelchuk
    • 1
  • A. S. Nikolenko
    • 1
    Email author
  • P. M. Lytvyn
    • 1
  • V. P. Kladko
    • 1
  • A. I. Gudymenko
    • 1
  • M. Ya. Valakh
    • 1
  • Z. F. Krasilnik
    • 2
  • D. N. Lobanov
    • 2
  • A. V. Novikov
    • 2
  1. 1.V. Lashkaryov Institute of Semiconductor PhysicsNational Academy of Sciences of UkraineKyivUkraine
  2. 2.Institute for Physics of MicrostructuresRussian Academy of SciencesNizhni NovgorodRussia

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