, 45:1281 | Cite as

The effect of Sn impurity on the optical and structural properties of thin silicon films

  • V. V. VoitovychEmail author
  • V. B. Neimash
  • N. N. Krasko
  • A. G. Kolosiuk
  • V. Yu. Povarchuk
  • R. M. Rudenko
  • V. A. Makara
  • R. V. Petrunya
  • V. O. Juhimchuk
  • V. V. Strelchuk
Surfaces, Interfaces, and Thin Films


The effect of tin impurity on the structure and optical properties of thin-film amorphous silicon is investigated. It is established that tin impurity accelerates crystallization of amorphous silicon. Immediately after deposition of a film onto a substrate at a temperature of ∼300°C, there is a crystalline phase of silicon in samples with tin. High-vacuum annealing at 350–750°C leads to growth of the crystalline phase in films with tin: nanocrystals grow in size from ∼3.0 to 4.5 nm. At the same time, in films without tin, only the degree of the short-range order increases. Silicon film without tin remains amorphous over the entire range of annealing temperatures.


Raman Spectrum Amorphous Silicon Silicon Film Silicon Nanocrystals Thin Film Silicon 
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Copyright information

© Pleiades Publishing, Ltd. 2011

Authors and Affiliations

  • V. V. Voitovych
    • 1
    Email author
  • V. B. Neimash
    • 1
  • N. N. Krasko
    • 1
  • A. G. Kolosiuk
    • 1
  • V. Yu. Povarchuk
    • 1
  • R. M. Rudenko
    • 2
  • V. A. Makara
    • 2
  • R. V. Petrunya
    • 2
  • V. O. Juhimchuk
    • 3
  • V. V. Strelchuk
    • 3
  1. 1.Institute of PhysicsNational Academy of Sciences of UkraineKyivUkraine
  2. 2.Department of PhysicsKyiv National UniversityKyivUkraine
  3. 3.Lashkaryov Institute of Semiconductor PhysicsNational Academy of Sciences of UkraineKyivUkraine

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