, 45:1009 | Cite as

The nature of electrical interaction of Schottky contacts

  • N. A. Torkhov
Surfaces, Interfaces, and Thin Films


Electrical interaction between metal-semiconductor contacts combined in a diode matrix with a Schottky barrier manifests itself in an appreciable variation in their surface potentials and static current-volt-characteristics. The necessary condition for appearance of electrical interaction between such contacts consists in the presence of a peripheral electric field (a halo) around them; this field propagates to a fairly large distances (<30 μm). The sufficient condition is the presence of regions where the above halos overlap. It has been shown that variation in the surface potential and the current-voltage characteristics of contacts occurs under the effect of the intrinsic electric field of the contact’s periphery and also under the effect of an electric field at matrix periphery; the latter field is formed as a result of superposition of electric fields of halos which form its contacts. The degree of the corresponding effect is governed by the distance between contacts and by the total charge of the space charge regions for all contacts of the matrix: their number, sizes (diameter D i, j ), concentration of doping impurities in the semiconductor N D , and physical nature of a metal-semiconductor system with a Schottky barrier (with the barrier height φ b ). It is established that bringing the contacts closer leads to a relative decrease in the threshold value of the “dead” zone in the forward current-voltage characteristics, an increase in the effective height of the barrier, and an insignificant increase in the nonideality factor. An increase in the total area of contacts (a total electric charge in the space charge region) in the matrix brings about an increase in the threshold value of the “dead” zone, a relative decrease in the effective barrier height, and an insignificant increase in the ideality factor.


GaAs Versus Characteristic Schottky Barrier Space Charge Region Schottky Contact 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


  1. 1.
    N. A. Torkhov, Dep. VINITI No. 334-D2008 from 18.04.2008.Google Scholar
  2. 2.
    N. A. Torkhov, V. G. Bozhkov, I. V. Ivonin, and V. A. Novikov, Poverkhnost’, No. 11, 1 (2009) [J. Surf. Invest. 3, 888 (2009)].Google Scholar
  3. 3.
    N. A. Torkhov and V. A. Novikov, Fiz. Tekh. Poluprovodn. 45, 70 (2011) [Semiconductors 45, 69 (2011)].Google Scholar
  4. 4.
    N. A. Torkhov, Fiz. Tekh. Poluprovodn. 44, 615 (2010) [Semiconductors 44, 590 (2010)].Google Scholar
  5. 5.
    N. A. Torkhov, Fiz. Tekh. Poluprovodn. 44, 767 (2010) [Semiconductors 44, 737 (2010)].Google Scholar
  6. 6.
    N. F. Mott, Proc. Camb. Phil. Soc. 34, 568 (1938).CrossRefADSGoogle Scholar
  7. 7.
    E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts, 2nd ed. (Clarendon, Oxford, 1988).Google Scholar
  8. 8.
    S. M. Sze, Modern Semiconductor Device Physics (Wiley, 1997).Google Scholar
  9. 9.
    V. G. Bozhkov and S. E. Zaitsev, Radioelectron. 52, 97 (2007).Google Scholar
  10. 10.
    M. I. Veksler, Fiz. Tekh. Poluprovodn. 30, 1718 (1996) [Semiconductors 30, 899 (1996)].Google Scholar
  11. 11.
    N. L. Chuprikov, Fiz. Tekh. Poluprovodn. 30, 443 (1996) [Semiconductors 30, 246 (1996)].Google Scholar
  12. 12.
    N. A. Torkhov, Fiz. Tekh. Poluprovodn. 35, 823 (2001) [Semiconductors 35, 788 (2001)].Google Scholar
  13. 13.
    I. A. Obukhov, Simulation of Charge Transport in Mesoscopic Structures (Veber, Sevastopol’, 2005), p. 165 [in Russian].Google Scholar
  14. 14.
    V. I. Shashkin, A. V. Murel’, V. M. Danil’tsev, and O. I. Khrykin, Fiz. Tekh. Poluprovodn. 36, 537 (2002) [Semiconductors 36, 505 (2002)].Google Scholar
  15. 15.
  16. 16.
    V. L. Mironov, Basics of Scanning Probe Microscopy (Inst. Fiz. Mikrostruktur RAN, Nizh. Novgorod, 2004) [in Russian].Google Scholar

Copyright information

© Pleiades Publishing, Ltd. 2011

Authors and Affiliations

  1. 1.Research Institute of Semiconductor DevicesTomskRussia

Personalised recommendations