Advertisement

Semiconductors

, Volume 44, Issue 13, pp 1699–1702 | Cite as

Radiation effects in nanoelectronic elements

  • D. V. Gromov
  • V. V. Elesin
  • G. V. Petrov
  • I. I. Bobrinetskii
  • V. K. NevolinEmail author
Nanotechnology

Abstract

Radiation defects induced in planar nanosized structures by steady and pulsed ionizing radiation have been analyzed. Characteristics of test samples with a planar nanosized structure fabricated by deposition of an ultrathin titanium film onto a semi-insulating GaAs substrate and of field-effect transistor structures based on bundles of carbon nanotubes have been studied. Physical mechanisms responsible for the radiation-induced changes in characteristics of the nanoelectronic elements under consideration have been established.

Keywords

Carbon Nanotubes Versus Characteristic Neutron Fluence Atomic Force Microscope Probe Nanosized Structure 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    Nanomaterials. Nanotechnologies. Nanosystem Techniques. World Achievements during 2005, Collected vol., Ed. by P. P. Mal’tsev (Tekhnosfera, Moscow, 2006) [in Russian].Google Scholar
  2. 2.
    Yu. F. Adamov, N. V. Korneev, V. G. Mokerov, et al., Mikrosist. Tekh. 5, 1216 (2000).Google Scholar
  3. 3.
    D. V. Gromov, Izv. Vyssh. Uchebn. Zaved., Élektron., No. 2, 85 (1998).Google Scholar
  4. 4.
    I. I. Bobrinetskii, V. K. Nevolin, A. A. Stroganov, and Yu. A. Chaplygin, Mikroélektronika 33, 356 (2004).Google Scholar
  5. 5.
    I. I. Bobrinetskii, A. N. Bulatov, and V. K. Nevolin, Nanotekhnologiya, No. 2, 9 (2006).Google Scholar

Copyright information

© Pleiades Publishing, Ltd. 2010

Authors and Affiliations

  • D. V. Gromov
    • 1
  • V. V. Elesin
    • 1
  • G. V. Petrov
    • 1
  • I. I. Bobrinetskii
    • 2
  • V. K. Nevolin
    • 2
    Email author
  1. 1.Moscow Engineering Physics Institute (National Research Nuclear University)MoscowRussia
  2. 2.Moscow Institute of Electronic Technology (Technical University)MoscowRussia

Personalised recommendations