Semiconductors

, Volume 44, Issue 13, pp 1699–1702 | Cite as

Radiation effects in nanoelectronic elements

  • D. V. Gromov
  • V. V. Elesin
  • G. V. Petrov
  • I. I. Bobrinetskii
  • V. K. Nevolin
Nanotechnology

Abstract

Radiation defects induced in planar nanosized structures by steady and pulsed ionizing radiation have been analyzed. Characteristics of test samples with a planar nanosized structure fabricated by deposition of an ultrathin titanium film onto a semi-insulating GaAs substrate and of field-effect transistor structures based on bundles of carbon nanotubes have been studied. Physical mechanisms responsible for the radiation-induced changes in characteristics of the nanoelectronic elements under consideration have been established.

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References

  1. 1.
    Nanomaterials. Nanotechnologies. Nanosystem Techniques. World Achievements during 2005, Collected vol., Ed. by P. P. Mal’tsev (Tekhnosfera, Moscow, 2006) [in Russian].Google Scholar
  2. 2.
    Yu. F. Adamov, N. V. Korneev, V. G. Mokerov, et al., Mikrosist. Tekh. 5, 1216 (2000).Google Scholar
  3. 3.
    D. V. Gromov, Izv. Vyssh. Uchebn. Zaved., Élektron., No. 2, 85 (1998).Google Scholar
  4. 4.
    I. I. Bobrinetskii, V. K. Nevolin, A. A. Stroganov, and Yu. A. Chaplygin, Mikroélektronika 33, 356 (2004).Google Scholar
  5. 5.
    I. I. Bobrinetskii, A. N. Bulatov, and V. K. Nevolin, Nanotekhnologiya, No. 2, 9 (2006).Google Scholar

Copyright information

© Pleiades Publishing, Ltd. 2010

Authors and Affiliations

  • D. V. Gromov
    • 1
  • V. V. Elesin
    • 1
  • G. V. Petrov
    • 1
  • I. I. Bobrinetskii
    • 2
  • V. K. Nevolin
    • 2
  1. 1.Moscow Engineering Physics Institute (National Research Nuclear University)MoscowRussia
  2. 2.Moscow Institute of Electronic Technology (Technical University)MoscowRussia

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