Formation and “white” photoluminescence of nanoclusters in SiOx films implanted with carbon ions
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- Belov, A.I., Mikhaylov, A.N., Nikolitchev, D.E. et al. Semiconductors (2010) 44: 1450. doi:10.1134/S106378261011014X
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Experimental data on ion synthesis of nanocomposite layers with carbon-rich clusters and silicon nanocrystals by irradiation of nonstoichiometric silicon oxide (SiOx) films with carbon ions followed by high-temperature annealing are reported. It is shown that, at rather high doses of C+ ions, the resulting films exhibit photoluminescence with a spectrum that encompass the entire visible and near-infrared regions. The formation of carbon-rich clusters and silicon nanocrystals is confirmed by X-ray photoelectron spectroscopy data. The distribution of carbon practically reproduces the calculated profile of ion ranges, suggesting that there is no noticeable diffusive redistribution of carbon. A qualitative model of the layered structure of ion-synthesized structures is suggested.