Semiconductors

, Volume 44, Issue 11, pp 1450–1456

Formation and “white” photoluminescence of nanoclusters in SiOx films implanted with carbon ions

  • A. I. Belov
  • A. N. Mikhaylov
  • D. E. Nikolitchev
  • A. V. Boryakov
  • A. P. Sidorin
  • A. P. Gratchev
  • A. V. Ershov
  • D. I. Tetelbaum
Workshop

DOI: 10.1134/S106378261011014X

Cite this article as:
Belov, A.I., Mikhaylov, A.N., Nikolitchev, D.E. et al. Semiconductors (2010) 44: 1450. doi:10.1134/S106378261011014X

Abstract

Experimental data on ion synthesis of nanocomposite layers with carbon-rich clusters and silicon nanocrystals by irradiation of nonstoichiometric silicon oxide (SiOx) films with carbon ions followed by high-temperature annealing are reported. It is shown that, at rather high doses of C+ ions, the resulting films exhibit photoluminescence with a spectrum that encompass the entire visible and near-infrared regions. The formation of carbon-rich clusters and silicon nanocrystals is confirmed by X-ray photoelectron spectroscopy data. The distribution of carbon practically reproduces the calculated profile of ion ranges, suggesting that there is no noticeable diffusive redistribution of carbon. A qualitative model of the layered structure of ion-synthesized structures is suggested.

Copyright information

© Pleiades Publishing, Ltd. 2010

Authors and Affiliations

  • A. I. Belov
    • 1
  • A. N. Mikhaylov
    • 1
  • D. E. Nikolitchev
    • 1
  • A. V. Boryakov
    • 1
  • A. P. Sidorin
    • 1
  • A. P. Gratchev
    • 1
  • A. V. Ershov
    • 1
  • D. I. Tetelbaum
    • 1
  1. 1.Lobachevsky State UniversityNizhni NovgorodRussia

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