Semiconductors

, Volume 44, Issue 7, pp 867–871

Calculation of the charge-carrier mobility in diamond at low temperatures

  • A. S. Baturin
  • V. N. Gorelkin
  • V. R. Soloviev
  • I. V. Chernousov
Electrical and Optical Properties of Semiconductors

Abstract

The discrepancies between the quasi-elastic and inelastic approaches to the calculation of the electron and hole mobilities in diamond at low temperatures when the carrier scattering from acoustic phonons becomes significantly inelastic have been numerically estimated. The calculations showed that the mobility described by a close-to-equilibrium distribution function differs several times from that obtained within the quasi-elastic approach even at 20 K. The results obtained are important for interpreting the low-temperature electrical experiments on high-purity diamond single crystals.

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Copyright information

© Pleiades Publishing, Ltd. 2010

Authors and Affiliations

  • A. S. Baturin
    • 1
  • V. N. Gorelkin
    • 1
  • V. R. Soloviev
    • 1
  • I. V. Chernousov
    • 1
  1. 1.Moscow Institute of Physics and TechnologyDolgoprudnyi, Moscow oblastRussia

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