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Semiconductors

, Volume 44, Issue 6, pp 816–823 | Cite as

Fabrication of heterostructures based on layered nanocrystalline silicon carbide polytypes

  • A. V. Semenov
  • A. V. Lopin
  • V. M. Puzikov
  • V. N. Baumer
  • I. N. Dmitruk
Fabrication, Treatment, and Testing of Materials and Structures

Abstract

The study demonstrates the possibility of forming heterostructures consisting of nanocrystalline SiC layers of the cubic 3C polytype (the lower layer on the substrate) and the rhombohedral 21R polytype (the upper layer) by direction deposition of nanocrystalline SiC layers onto a substrate subjected to gradient heating. The structure and order of arrangement of the SiC layers are analyzed in detail by X-ray diffraction studies, femtosecond photoluminescence measurements, and optical spectroscopy. The nature of the peaks observed in the photoluminescence, optical reflectance, and absorption spectra is discussed.

Keywords

Optical Reflectance Lopin Positive Temperature Gradient Optical Reflectance Spectrum Hexagonal Polytype 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Pleiades Publishing, Ltd. 2010

Authors and Affiliations

  • A. V. Semenov
    • 1
  • A. V. Lopin
    • 1
  • V. M. Puzikov
    • 1
  • V. N. Baumer
    • 1
  • I. N. Dmitruk
    • 2
  1. 1.Institute for Single CrystalsNational Academy of Sciences of UkraineKharkovUkraine
  2. 2.Institute of PhysicsNational Academy of Sciences of UkraineKievUkraine

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