, Volume 44, Issue 2, pp 171–183 | Cite as

Electrical properties of hybrid (ferromagnetic metal)—(layered semiconductor) Ni/p–GaSe structures

  • A. P. BakhtinovEmail author
  • V. N. Vodopyanov
  • Z. D. Kovalyuk
  • V. V. Netyaga
  • O. S. Lytvyn
Semiconductor Structures, Interfaces, and Surfaces


Two-barrier Ni/n-Ga2Se3/p-GaSe structures with nanoscale Ni-alloy grains caused by reactions at the “metal-layered semiconductor” interface were formed after growing Ni layers on the p-GaSe (0001) surface. Current–voltage and capacitance–voltage characteristics of hybrid structures were studied in the temperature range of 220–350 K. The dependence of the impedance spectra on the bias voltage was studied at various temperatures. The frequency dependences of the impedance at high frequencies (f = 106 Hz) are discussed in terms of the phenomena of spin injection and extraction in structures with an ultrathin spin-selective Ni/n-Ga2Se3 barrier and the effects of spin diffusion and relaxation in the semiconductor substrate. The room-temperature phenomena of the Coulomb blockade and negative differential capacitance were detected. These phenomena are explained based on an analysis of transport processes in a narrow region near the “ferromagnetic metal–semiconductor” interface, where nanoscale grains are arranged.


Bias Voltage Impedance Spectrum Space Charge Region Hybrid Structure Forward Bias 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© Pleiades Publishing, Ltd. 2010

Authors and Affiliations

  • A. P. Bakhtinov
    • 1
    Email author
  • V. N. Vodopyanov
    • 1
  • Z. D. Kovalyuk
    • 1
  • V. V. Netyaga
    • 1
  • O. S. Lytvyn
    • 2
  1. 1.Frantsevich Institute of Materials Science Problems, Chernivtsi BranchNational Academy Sciences of UkraineChernivtsiUkraine
  2. 2.Lashkarev Institute of Semiconductor PhysicsNational Academy Sciences of UkraineKyivUkraine

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