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Semiconductors

, Volume 44, Issue 1, pp 66–71 | Cite as

Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface

  • M. P. Mikhailova
  • E. V. Ivanov
  • K. D. Moiseev
  • Yu. P. Yakovlev
  • E. Hulicius
  • A. Hospodkova
  • J. Pangrac
  • T. Šimeček
Low-Dimensional Systems

Abstract

Luminescent characteristics of asymmetric p-InAs/AlSb/InAsSb/AlSb/p-GaSb type II heterostructures with deep quantum wells at the heterointerface are studied. The heterostructures were grown by metalorganic vapor phase epitaxy. Intense positive and negative luminescence was observed in the range of photon energies of 0.3–0.4 eV with a forward and reverse bias, respectively. Dependences of the spectra and intensities for positive and negative luminescence on the pumping current and on the temperature are studied in the range of 77–380 K. It is established that, at a temperature higher than 75°C, intensity of negative luminescence surpasses that of positive luminescence by 60%. The suggested heterostructures can be used as lightemitting diodes (photodiodes) with switched positive and negative luminescence in the mid-IR spectral range of 3–4 μm.

Keywords

GaSb Reverse Bias Forward Bias Pump Current AlSb 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Pleiades Publishing, Ltd. 2010

Authors and Affiliations

  • M. P. Mikhailova
    • 1
  • E. V. Ivanov
    • 1
  • K. D. Moiseev
    • 1
  • Yu. P. Yakovlev
    • 1
  • E. Hulicius
    • 2
  • A. Hospodkova
    • 2
  • J. Pangrac
    • 2
  • T. Šimeček
    • 2
  1. 1.Ioffe Physicotechnical InstituteRussian Academy of SciencesSt. PetersburgRussia
  2. 2.Institute of PhysicsAcademy of Sciences of Czech RepublicPragueCzech Republic

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