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Semiconductors

, Volume 43, Issue 5, pp 590–593 | Cite as

Optical properties of the Si-doped GaN/Al2O3 films

  • N. S. Zayats
  • P. O. GentsarEmail author
  • V. G. Boiko
  • O. S. Litvin
  • M. V. Vuychik
  • A. V. Stronski
  • I. B. Yanchuk
Semiconductor Structures, Interfaces, and Surfaces

Abstract

Morphological and optical studies of the Si-doped GaN films (doping level N Si = 1.5 × 1019 cm−3) grown by vapor-phase epitaxy from metalorganic compounds on a sapphire substrate oriented along the c axis are conducted. For the grown GaN films, the following characteristics are obtained: energy of electron transition E 0, absorption coefficient α, refractive index n, and frequencies of transverse and longitudinal optical lattice vibrations characteristic of the crystalline GaN films.

PACS numbers

61.72.Vv 81.15.Gh 78.20.Ci 78.30.Fs 

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Copyright information

© Pleiades Publishing, Ltd. 2009

Authors and Affiliations

  • N. S. Zayats
    • 1
  • P. O. Gentsar
    • 1
    Email author
  • V. G. Boiko
    • 1
  • O. S. Litvin
    • 1
  • M. V. Vuychik
    • 1
  • A. V. Stronski
    • 1
  • I. B. Yanchuk
    • 1
  1. 1.Lashkarev Institute of Semiconductor PhysicsNational Academy of Sciences of UkraineKievUkraine

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