Semiconductors

, Volume 42, Issue 9, pp 1016–1022

Relaxation of excited donor states in silicon with emission of intervalley phonons

  • V. V. Tsyplenkov
  • E. V. Demidov
  • K. A. Kovalevsky
  • V. N. Shastin
Electronic and Optical Properties of Semiconductors

DOI: 10.1134/S1063782608090030

Cite this article as:
Tsyplenkov, V.V., Demidov, E.V., Kovalevsky, K.A. et al. Semiconductors (2008) 42: 1016. doi:10.1134/S1063782608090030

Abstract

The process of low-temperature relaxation of excited states of Group V donors in silicon due to coupling of electrons bound at Coulomb centers with intervalley phonons is analyzed. The rate of transitions from the 2p0 state to the group of 1s(E, T2) states with emission of the intervalley acoustic phonons LA-g and TA-f is calculated for the phosphorus, antimony, arsenic, and bismuth donors. It is shown that the TA-f phonons make a substantial contribution to nonradiative decay of the 2p0 state that controls the stimulated infrared emission of the phosphorus and antimony donors in silicon.

PACS numbers

81.05.Cy 63.20.Mt 78.30.Am 

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Copyright information

© Pleiades Publishing, Ltd. 2008

Authors and Affiliations

  • V. V. Tsyplenkov
    • 1
  • E. V. Demidov
    • 1
  • K. A. Kovalevsky
    • 1
  • V. N. Shastin
    • 1
  1. 1.Institute for Physics of MicrostructuresRussian Academy of SciencesNizhni NovgorodRussia

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