Relaxation of excited donor states in silicon with emission of intervalley phonons
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- Tsyplenkov, V.V., Demidov, E.V., Kovalevsky, K.A. et al. Semiconductors (2008) 42: 1016. doi:10.1134/S1063782608090030
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The process of low-temperature relaxation of excited states of Group V donors in silicon due to coupling of electrons bound at Coulomb centers with intervalley phonons is analyzed. The rate of transitions from the 2p0 state to the group of 1s(E, T2) states with emission of the intervalley acoustic phonons LA-g and TA-f is calculated for the phosphorus, antimony, arsenic, and bismuth donors. It is shown that the TA-f phonons make a substantial contribution to nonradiative decay of the 2p0 state that controls the stimulated infrared emission of the phosphorus and antimony donors in silicon.
PACS numbers81.05.Cy 63.20.Mt 78.30.Am
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