Semiconductors

, Volume 42, Issue 3, pp 354–357 | Cite as

Efficient generation of the first waveguide mode in the InGaAs/GaAs/InGaP heterolaser

  • A. A. Biryukov
  • B. N. Zvonkov
  • S. M. Nekorkin
  • V. Ya. Aleshkin
  • A. A. Dubinov
  • V. V. Kocharovskiĭ
  • Vl. V. Kocharovskiĭ
Physics of Semiconductor Devices
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Abstract

Generation of the first excited transverse mode (TE1) in a new InGaAs/GaAs/InGaP diode heterolaser with a thin InGaP layer at the waveguide center was studied. This laser design decreases the competition of the first and fundamental modes and provides TE1 mode lasing at a threshold current comparable to that of an ordinary laser oscillating at the fundamental TE0 mode.

PACS numbers

42.55.Px 42.65.An 42.70.Nq 78.67.De 
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Copyright information

© Pleiades Publishing, Ltd. 2008

Authors and Affiliations

  • A. A. Biryukov
    • 1
  • B. N. Zvonkov
    • 1
  • S. M. Nekorkin
    • 1
  • V. Ya. Aleshkin
    • 2
  • A. A. Dubinov
    • 2
  • V. V. Kocharovskiĭ
    • 3
    • 4
  • Vl. V. Kocharovskiĭ
    • 4
  1. 1.Research Physicotechnical InstituteNizhni Novgorod State UniversityNizhni NovgorodRussia
  2. 2.Institute for Physics of MicrostructuresRussian Academy of SciencesNizhni NovgorodRussia
  3. 3.Department of PhysicsTexas A&M UniversityCollege StationUSA
  4. 4.Institute of Applied PhysicsRussian Academy of SciencesNizhni NovgorodRussia

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