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Semiconductors

, Volume 42, Issue 2, pp 215–219 | Cite as

Decrease in effective electron mobility in the channel of a metal-oxide-semiconductor transistor as the gate length is decreased

  • A. A. FrantsuzovEmail author
  • N. I. Boyarkina
  • V. P. Popov
Physics of Semiconductor Devices

Abstract

Effective electron mobility μeff in channels of metal-oxide-semiconductor transistors with a gate length L in the range of 3.8 to 0.34 μm was measured; the transistors were formed on wafers of the silicon-oninsulator type. It was found that μeff decreases as L is decreased. It is shown that this decrease can be accounted for by the effect of series resistances of the source and drain only if it is assumed that there is a rapid increase in these resistances as the gate voltage is decreased. This assumption is difficult to substantiate. A more realistic model is suggested; this model accounts for the observed decrease in μeff as L is decreased. The model implies that zones with a mobility lower than that in the middle part of the channel originate at the edges of the gate. An analysis shows that, in this case, the plot of the dependence of 1/μeff on 1/L should be linear, which is exactly what is observed experimentally. The use of this plot makes it possible to determine both the electron mobility μ0 in the middle part of the channel and the quantity A that characterizes the zones with lowered mobility at the gate’s edges.

PACS numbers

73.40.-c 73.40.Qv 73.25.+i 73.20.-r 

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Copyright information

© Pleiades Publishing, Ltd. 2008

Authors and Affiliations

  • A. A. Frantsuzov
    • 1
    Email author
  • N. I. Boyarkina
    • 1
  • V. P. Popov
    • 1
  1. 1.Institute of Semiconductor Physics, Siberian BranchRussian Academy of SciencesNovosibirskRussia

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