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Semiconductors

, Volume 41, Issue 9, pp 1117–1125 | Cite as

Reconstruction of dependences of the tunneling current on the oxide voltage using the dynamic current-voltage characteristics of the n +-Si-SiO2-n-Si heterostructures

  • A. G. Zhdan
  • N. F. Kukharskaya
  • V. G. Naryshkina
  • G. V. ChuchevaEmail author
Physics of Semiconductor Devices

Abstract

Precision measurements of dynamic current-voltage characteristics of an Al-n +-Si-SiO2-n-Si structure with a thin (<50 Å) oxide make it possible to separate the active (I a ) and capacitive (I c ) components from the total current. An algorithm for the analysis of the capacitive component is developed; this algorithm makes it possible to determine in a single experiment the doping level of n-Si, the oxide capacitance C i , and also the density and sign of the charge fixed in the oxide. Dependences of the surface potential in n-Si and the voltage drop across the oxide on the gate potential V g in the transverse electric fields |F| ≤ 10 MV/cm were calculated based on the above data without using any adjustable parameters. At maximum values of |F|, the sheet density of electrons (holes) in n-Si does not exceed 1013 cm−2, which is indicative of the degeneracy and size quantization of electron gas. The dependences I t (V g ) and V i (V g ) were used to recover the current-voltage characteristics of the tunneling current I t (V i ) ≡ I a (V i ); these characteristics were measured within more than ten orders of magnitude of their range of variation in the conditions of both the enhancement of the n-Si surface and the inversion. The observed I t (V i ) characteristics are not quantitatively described in the context of existing concepts of the tunnel effect.

PACS numbers

73.40.Gk 73.40.Qv 85.30.Mn 

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Copyright information

© Pleiades Publishing, Ltd. 2007

Authors and Affiliations

  • A. G. Zhdan
    • 1
  • N. F. Kukharskaya
    • 1
  • V. G. Naryshkina
    • 1
  • G. V. Chucheva
    • 1
    Email author
  1. 1.Institute of Radio Engineering and ElectronicsRussian Academy of ScencesFryazinoRussia

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