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Semiconductors

, Volume 41, Issue 4, pp 371–375 | Cite as

In-depth resolution for LBIC technique by two-photon absorption

  • D. Wan
  • V. Pouget
  • A. Douin
  • P. Jaulent
  • D. Lewis
  • P. Fouillat
The 8th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, June 11–14, 2006, St. Petersburg, Russia

Abstract

A detailed study of the in-depth dependence of the laser-beam-induced current (LBIC) technique by sub-bandgap two-photon absorption (TPA) has been carried out in this paper. The strong focal dependence mechanism for TPA has been demonstrated by our studies through comparing the TPA technique with traditional single-photon-absorption-based ones. Dependence of the TPA-induced single-event transient response in linear integrated circuits on depth and position is investigated. Our results illustrate an interesting in-depth resolution for the TPA technique, which enables three-dimensional imaging of charge-collecting volumes through the backside of integrated circuits.

PACS numbers

63.20.-e 78.40.Fy 78.67.De 85.30.De 85.35.Be 

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Copyright information

© Pleiades Publishing, Ltd. 2007

Authors and Affiliations

  • D. Wan
    • 1
  • V. Pouget
    • 1
  • A. Douin
    • 1
  • P. Jaulent
    • 1
  • D. Lewis
    • 1
  • P. Fouillat
    • 1
  1. 1.IXL, Microelectronics Lab.University Bordeaux 1TalenceFrance

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