Semiconductors

, Volume 40, Issue 8, pp 959–967

Low-temperature materials and thin-film transistors for electronics on flexible substrates

  • A. Sazonov
  • M. Meitine
  • D. Stryakhilev
  • A. Nathan
Physics of Semiconductor Devices

DOI: 10.1134/S106378260608015X

Cite this article as:
Sazonov, A., Meitine, M., Stryakhilev, D. et al. Semiconductors (2006) 40: 959. doi:10.1134/S106378260608015X

Abstract

The deposition processes and electronic properties of thin-film semiconductors and insulators based on silicon in relation to the fabrication of electronic devices on flexible plastic substrates are considered. The films of amorphous hydrogenated silicon (a-Si:H), nanocrystalline silicon (nc-Si), and amorphous silicon nitride (a-SiNx), and also thin-film transistors are fabricated at comparatively low temperatures (120°C, 75°C) using existing commercial plasma-chemical equipment. The parameters of thin-film transistors based on a-Si:H and fabricated at the aforementioned relatively low temperatures are compatible with those of high-temperature analogues.

PACS numbers

81.15.Gh 85.30.Tv 

Copyright information

© Pleiades Publishing, Inc. 2006

Authors and Affiliations

  • A. Sazonov
    • 1
  • M. Meitine
    • 1
    • 2
  • D. Stryakhilev
    • 1
  • A. Nathan
    • 1
  1. 1.Electrical and Computer Engineering DepartmentUniversity of WaterlooWaterlooCanada
  2. 2.ATI Technologies Inc.OntarioCanada

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