Semiconductors

, Volume 40, Issue 5, pp 554–557 | Cite as

Electrical characteristics of the ITO/HgInTe photodiodes

  • L. A. Kosyachenko
  • I. M. Rarenko
  • E. F. Sklyarchuk
  • I. I. German
  • Sun Weiguo
Semiconductor Structures, Interfaces, and Surfaces

Abstract

Photodiodes designed to be sensitive in the region 0.5–1.7 µm and obtained by vacuum magnetron sputtering of the ITO (SnO2 + In2O3) layer on the surface of the Hg3In2Te6 single crystal are studied. The electrical characteristics, measured at 265–333 K, indicate that the mechanism of charge transport in the diodes under study is thermionic. The current-voltage characteristic and its temperature variations are described quantitatively based on the energy diagram and the found parameters of the heterojunction.

PACS numbers

73.40.Lq 73.50.Pz 85.60.Dn 

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Copyright information

© Pleiades Publishing, Inc. 2006

Authors and Affiliations

  • L. A. Kosyachenko
    • 1
  • I. M. Rarenko
    • 1
  • E. F. Sklyarchuk
    • 1
  • I. I. German
    • 1
  • Sun Weiguo
    • 2
  1. 1.Chernovtsy National UniversityChernovtsyUkraine
  2. 2.Optoelectronics InstituteLuoyangPeople’s Republic of China

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