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Plasma Physics Reports

, Volume 37, Issue 1, pp 87–95 | Cite as

Crystalline islands of semiconductor films

  • G. I. Zmievskaya
  • A. L. Bondareva
Plasma-Surface Interaction

Abstract

Silicon carbide (SiC) nucleation in the form of powder in a discharge plasma and the formation of thin film islands on a Si(100) substrate in the course of gas-phase epitaxy are simulated numerically. Models of plasma-like media and nonequilibrium processes accompanying phase transitions of the first kind (such as condensation and crystallization) in the initial fast (fluctuation) stage are described. The nonstationary evolution of nuclei size distribution functions is modeled by solving kinetic equations in partial derivatives and stochastic Ito-Stratonovich analog equations. This makes it possible to refine the formation mechanisms of microcrystalline state polytypes and calculate the nucleation rate and the initial roughness of a SiC coating.

Keywords

Plasma Physic Report Discharge Plasma Dusty Plasma Nucleus Size Drop Charge 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Pleiades Publishing, Ltd. 2011

Authors and Affiliations

  • G. I. Zmievskaya
    • 1
  • A. L. Bondareva
    • 1
  1. 1.M.V. Keldysh Institute of Applied MathematicsRussian Academy of SciencesMoscowRussia

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