Temperature-Dependent Magnetoresistance of Single-Layer Graphene
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The magnetoresistances of single-layer graphene samples with various types of scattering impurities are measured over wide temperature and magnetic field ranges. The magnetoresistance of samples with a short-range potential is shown to be proportional to the square root of the magnetic field except for the cases of relatively low concentrations, where the magnetoresistance is linear. The square-root temperature dependence of the magnetoresistance is analyzed and good agreement with theoretical calculations is obtained. These results indicate that the square-root magnetoresistance in low magnetic fields can be considered as a characteristic feature of single-layer graphene with a short-range disorder.
We thank I.V. Gornyi for helpful discussions.
G.Yu.V acknowledges the support of the Russian Science Foundation, project no. 17-72-10134.
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