Abstract
The results of the study of the influence of Cu on the Shubnikov–de Haas effect and the electrical properties of p-Sb2 –xCuxTe3 single crystals (0 ≤ x ≤ 0.1) are presented. In the framework of the parabolic model of the energy spectrum, the hole concentrations and the Fermi energy in Sb2 –xCuxTe3 are calculated based on the oscillation frequencies of the magnetoresistance. It is shown that doping by Cu has an acceptor effect and significantly increases the frequencies of Shubnikov–de Haas oscillations. A plateau is observed in the dependences of the Hall resistance on magnetic field. The dependences of the resistance on temperature obey the power law with the exponent m = 1.2, which is characteristic of scattering on phonons with the contribution of scattering on ionized impurities. Unlike other impurities, the exponent remains almost unchanged when doped by Cu to the maximum concentrations studied.
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REFERENCES
D. Hsieh, D. Qian, L. Wray, Y. Xia, Y. S. Hor, R. J. Cava, and M. Z. Hasan, Nature (London, U.K.) 452, 970 (2008).
H. Zhang, C.-X. Liu, X.-L. Qi, X. Dai, Z. Fang, and S.-C. Zhang, Nat. Phys. 5, 438 (2009).
Y. L. Chen, J. G. Analytis, J.-H. Chu, Z. K. Liu, S.‑K. Mo, X. L. Qi, H. J. Zhang, D. H. Lu, X. Dai, Z. Fang, S. C. Zhang, I. R. Fisher, Z. Hussain, and Z.‑X. Shen, Science (Washington, DC, U. S.) 325, 178 (2009).
Y. Xia, D. Qian, D. Hsieh, L. Wray, A. Pal, H. Lin, A. Bansil, D. Grauer, Y. S. Hor, R. J. Cava, and M. Z. Hasan, Nat. Phys. 5, 398 (2009).
G. Wang, X. Zhu, J. Wen, X. Chen, K. He, L. Wang, X. Ma, Y. Liu, X. Dai, Z. Fang, J. Jia, and Q. Xue, Nano Res. 3, 874 (2010).
Y. Jiang, Y. Wang, M. Chen, Zhi Li, C. Song, Ke He, L. Wang, X. Chen, X. Ma, and Qi-Kun Xue, Phys. Rev. Lett. 108, 016401 (2012).
V. A. Kul’bachinskii, S. A. Azou, Z. D. Kovalyuk, M. N. Pyrlya, and S. Ya. Skipidarov, Sov. Phys. Solid State 33, 461 (1991).
N. B. Brandt and V. A. Kulbachinskii, Phys. B (Amsterdam, Neth.) 173, 303 (1991).
V. A. Kulbachinskii, Z. D. Kovalyuk, and M. N. Pyrlya, Phys. Status Solidi B 169, 157 (1992).
A. Vaško, L. Tichý, J. Horãk, and J. Weissensteinm, Appl. Phys. 5, 217 (1974).
J. Bludska, S. Karamazov, J. Navratil, I. Jakubec, and J. Horak, Solid State Ionics 171, 251 (2004).
M.-K. Han, K. Ahn, H. J. Kim, J.-S. Rhyee, and S.‑J. Kim, J. Mater. Chem. 21, 11365 (2011).
W.-S. Liu, Q. Zhang, Y. Lan, S. Chen, X. Yan, Q. Zhang, H. Wang, D. Wang, G. Chen, and Z. Ren, Adv. Energy Mater. 1, 577 (2011).
M. Jeong, J.-Y. Tak, S. Lee, W.-S. Seo, H. K. Cho, and Y. S. Lim, J. Alloys Compd. 696, 213 (2017).
Y. S. Lim, M. Song, S. Lee, T.-H. An, C. Park, and W.‑S. Seo, J. Alloys Compd. 687, 320 (2016).
H. J. Yu, M. Jeong, Y. S. Lim, W.-S. Seo, O.-J. Kwon, C.-H. Park, and H.-J. Hwang, R. Soc. Chem. Adv. 4, 43811 (2014).
Y. S. Hor, A. J. Williams, J. G. Checkelsky, P. Roushan, J. Seo, Q. Xu, H. W. Zandbergen, A. Yazdani, N. P. Ong, and R. J. Cava, Phys. Rev. Lett. 104, 057001 (2010).
J. Zhu, J. L. Zhang, P. P. Kong, S. J. Zhang, X. H. Yu, J. L. Zhu, Q. Q. Liu, X. Li, R. C. Yu, R. Ahuja, W. G. Yang, G. Y. Shen, H. K. Mao, H. M. Weng, X. Dai, Z. Fang, Y. S. Zhao, and C. Q. Jin, Sci. Rep. 3, 2016 (2013).
L. Zhao, H. Deng, I. Korzhovska, M. Begliarbekov, Z. Chen, E. Andrade, E. Rosenthal, A. Pasupathy, V. Oganesyan, and L. Krusin-Elbaum, Nat. Commun. 6, 8279 (2015).
S. G. Buga, V. A. Kulbachinskii, V. G. Kytin, G. A. Kytin, I. A. Kruglov, N. A. Lvova, N. S. Perov, N. R. Serebryanaya, S. A. Tarelkin, and V. D. Blank, Chem. Phys. Lett. 631–632, 97 (2015).
D. Shia, R. Wang, G. Wang, C. Li, X. Shen, and Q. Niea, Vacuum 145, 347 (2017).
T. Thonhauser, T. J. Scheidemantel, J. O. Sofo, J. V. Badding, and G. D. Mahan, Phys. Rev. B 68, 085201 (2003).
V. A. Kulbachinskii, Z. M. Dashevskii, M. Inoue, M. Sasaki, H. Negishi, W. X. Gao, P. Lostak, J. Horak, and A. de Visser, Phys. Rev. B 52, 10915 (1995).
V. A. Kul’bachinskii, N. E. Klokova, Ya. Gorak, P. Loshtyak, S. A. Azou, and G. A. Mironova, Sov. Phys. Solid State 31, 112 (1989).
V. A. Kulbachinskii, N. Miura, H. Nakagawa, C. Drasar, and P. Lostak, J. Phys.: Condens. Matter 11, 5273 (1999).
Xiao-Liang Qi and Shou-Cheng Zhang, Rev. Mod. Phys. 83, 1057 (2011).
V. A. Kul’bachinskii, V. G. Kytin, A. Yu. Kaminskii, P. Lošt’ak, C. Drašar, and A. de Visser, J. Exp. Theor. Phys. 90, 1081 (2000).
V. A. Kul’bachinskii, A. Yu. Kaminskii, P. M. Tarasov, and P. Lostak, Phys. Solid State 48, 833 (2006).
V. A. Kulbachinskii, I. S. Vasil’evskii, R. A. Lunin, G. Galistu, A de Visser, G. B. Galiev, S. S. Shirokov, and V. G. Mokerov, Semicond. Sci. Technol. 22, 222 (2007).
N. B. Brandt and V. A. Kul’bachinskii, Quasi-Particles in Condensed Matter Physics (Fizmatlit, Moscow, 2016), Chap. 20 [in Russian].
V. A. Kul’bachinskii, A. Yu. Kaminskii, N. Miyadzhima, M. Sasaki, Kh. Negishi, M. Inoue, and Kh. Kadomatsu, JETP Lett. 70, 767 (1999).
V. A. Kulbachinskii, N. B. Brandt, P. A. Cheremnykh, S. A. Azou, J. Horak, and P. Lostak, Phys. Status Solidi B 150, 237 (1988).
V. A. Kulbachinskii, A. Yu. Kaminsky, R. A. Lunin, K. Kindo, Y. Narumi, K Suga, S. Kawasaki, M. Sasaki, N. Miyajima, P. Lostak, and P. Hajek, Semicond. Sci. Technol. 17, 1133 (2002).
N. Miyajima, M. Sasaki, H. Negishi, M. Inoue, V. A. Kulbachinskii, A. Yu. Kaminskii, and K. Suga, J. Low Temp. Phys. 123, 219 (2001).
M. Sasaki, N. Miyajima, H. Negishi, M. Inoue, V. A. Kulbachinskii, K. Suga, Y. Narumi, and K. Kindo, Phys. B (Amsterdam, Neth.) 298, 510 (2001).
M. Inoue, N. Miyajima, M. Sasaki, H. Negishi, H. Kadomatsu, and V. A. Kulbachinskii, Phys. B (Amsterdam, Neth.) 284, 1718 (2000).
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This article was prepared on the basis of the XXXVIII Workshop on Low Temperature Physics (NT-38).
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Translated by A. Zeigarnik
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Kulbachinskii, V.A., Zinov’ev, D.A., Maslov, N.V. et al. Shubnikov–de Haas Effect and Electrophysical Properties of the Topological Insulator Sb2 –xCuxTe3. J. Exp. Theor. Phys. 128, 926–931 (2019). https://doi.org/10.1134/S1063776119050121
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DOI: https://doi.org/10.1134/S1063776119050121