Journal of Experimental and Theoretical Physics

, Volume 115, Issue 5, pp 866–875

Dynamics of charge carriers at the place of the formation of a muonic atom in diamond and silicon

  • S. A. Antipov
  • Yu. M. Belousov
  • V. R. Solov’ev
Electronic Properties of Solid

Abstract

The space-time distribution of charge carriers at the place of the location of a muonic atom formed when a negative muon is captured by an atom of the lattice has been numerically simulated taking into account the self-consistent electric field. The results of μSR experiments with negative muons in diamond crystals have been explained and reasons for the difference in the behavior of the spin polarization of the negative muon in boron-doped diamond and in silicon have been revealed. The condition of the validity of the analytical solution of this problem has been obtained. It has been shown that the muonic atom in diamond, in contrast to silicon, does not form a neutral acceptor center in the paramagnetic state during the muon experiment and remains in the diamagnetic state of a positive ion.

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Copyright information

© Pleiades Publishing, Ltd. 2012

Authors and Affiliations

  • S. A. Antipov
    • 1
  • Yu. M. Belousov
    • 1
  • V. R. Solov’ev
    • 1
  1. 1.Moscow Institute of Physics and Technology (State University)Dolgoprudnyi, Moscow oblastRussia

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