Investigation of ultrafast processes in photoexcited bismuth by broadband probing in the wavelength range 0.4–0.9 μm
- First Online:
- Cite this article as:
- Melnikov, A.A., Misochko, O.V., Kompanets, V.O. et al. J. Exp. Theor. Phys. (2010) 111: 431. doi:10.1134/S106377611009013X
- 62 Downloads
The decay of the photoexcited state of a bismuth single crystal is investigated in the wavelength range from 400 to 900 nm by means of femtosecond laser reflection spectroscopy. Oscillations produced by coherent fully symmetric A1g phonons have been detected in the photoinduced response, along with a relaxation component. The dynamics of the electronic subsystem of the crystal is shown to be characterized by three values of the decay time: 1 ps, 7 ps, and ∼1 ns. The spectral dependence of the reflectivity oscillation amplitude has been measured; the possible cause of the shape of the derived curve is described.