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Crystallography Reports

, Volume 59, Issue 3, pp 315–322 | Cite as

Study of the structural quality of heteroepitaxial silicon-on-sapphire structures by high-resolution X-ray diffraction, X-ray reflectivity, and electron microscopy

  • A. E. Blagov
  • A. L. Vasiliev
  • A. S. Golubeva
  • I. A. Ivanov
  • O. A. Kondratev
  • Yu. V. Pisarevsky
  • M. Yu. Presnyakov
  • P. A. Prosekov
  • A. Yu. Seregin
Diffraction and Scattering of Ionizing Radiations

Abstract

Heteroepitaxial silicon-on-sapphire (SOS) structures have been studied by high-resolution X-ray diffraction, X-ray reflectivity, electron microscopy, and electron diffraction. These methods yielded a large amount of complementary data on the defect structure of both the sapphire substrate and the silicon film, including integral and local (at the atomic-resolution level) information about the substrate, film, and sapphire-silicon interface.

Keywords

Epitaxial Layer Crystallography Report Sapphire Substrate Electron Density Profile Double Crystal 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Pleiades Publishing, Inc. 2014

Authors and Affiliations

  • A. E. Blagov
    • 1
  • A. L. Vasiliev
    • 2
  • A. S. Golubeva
    • 1
  • I. A. Ivanov
    • 1
  • O. A. Kondratev
    • 1
  • Yu. V. Pisarevsky
    • 1
  • M. Yu. Presnyakov
    • 2
  • P. A. Prosekov
    • 1
  • A. Yu. Seregin
    • 1
  1. 1.Shubnikov Institute of CrystallographyRussian Academy of SciencesMoscowRussia
  2. 2.National Research Centre “Kurchatov Institute”MoscowRussia

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