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Russian Microelectronics

, Volume 48, Issue 6, pp 402–408 | Cite as

Effect of the Pressure of Oxygen on the Plasma Oxidation of the Titanium Nitride Surface

  • V. M. MordvintsevEmail author
  • V. V. Naumov
  • S. G. Simakin
Article
  • 5 Downloads

Abstract

The dependences of the thickness of the TiO2 layer formed on the TiN surface on a partial pressure (flow) of oxygen in an argon-oxygen plasma of a magnetron sputtering system are established by secondary-ion mass spectrometry. The obtained dependences can be explained using a simple phenomenological model. Based on the previous data, a general expression for the dependences of the TiO2 thickness on the annealing time and temperature, as well as the partial pressure of oxygen, are derived. It is shown that the kinetic oxidation mode changes in the investigated annealing temperature range, which requires refining the model used previously and its parameters. The results can be used to form a nanometer oxide layer of the specified thickness on the titanium nitride surface.

Keywords:

titanium nitride oxidation plasma stimulation nanometer oxide kinetics secondary-ion mass spectrometry 

Notes

ACKNOWLEDGMENTS

The SIMS study was carried out on a TOF.SIMS5 facility of the Center of Collective Use “Diagnostics of Micro- and Nanostructures.”

FUNDING

This study was supported by state assignment no. 0066-2019-0003 of the Ministry of Science and Higher Education of the Russian Federation for the Yaroslavl’ Branch of the Valiev Institute of Physics and Technology, Russian Academy of Sciences.

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Copyright information

© Pleiades Publishing, Ltd. 2019

Authors and Affiliations

  • V. M. Mordvintsev
    • 1
    Email author
  • V. V. Naumov
    • 1
  • S. G. Simakin
    • 1
  1. 1.Valiev Institute of Physics and Technology, Russian Academy of Sciences, Yaroslavl BranchYaroslavlRussia

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