This paper is devoted to analyzing the effect of gamma radiation on the behavior of optocouplers. According to a series of experiments that involve masking various parts of a chip from X-ray irradiation, the most sensitive region of the chip is determined and the design of the optocoupler is improved. Upon modification, the radiation hardness of the device more than triples.
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Reed, R., Guideline for Ground Radiation Testing and Using Optocouplers in the Space Radiation Environment. http://radhome.gsfc.nasa.gov/radhome/papers, 2002.
Pershenkov, V.S., Sogoyan, A.V., and Telets, V.A., Conversion model of radiation-induced interface-trap buildup and the some examples of its application, IOP Conf. Ser.: Mater. Sci. Eng., 2016, vol. 151, no. 1, p. 012001.
Sogoyan, A.V., Chumakov, A.I., Smolin, A.A., Ulanova, A.V., and Boruzdina, A.B., A simple analytical model of single-event upsets in bulk CMOS, Nucl. Instrum. Methods Phys. Res.,Sect. B, 2017, vol. 400, pp. 31–36.
Akhmetov, A.O., Bobrovskiy, D.V., Tararaksin, A.S., Petrov, A.G., Kessarinskiy, L.N., Boychenko, D.V., Chumakov, A.I., Rousset, A., and Chatry, C., IC SEE comparative studies at UCL and JINR heavy ion accelerators, in Proceedings of the 2016 IEEE Radiation Effects Data Workshop, REDW 2016, Portland, U.S.A., Apr. 3,2017. https://doi.org/10.1109/NSREC.2016.7891720
Shvetsov-Shilovskiy, I.I., Boruzdina, A.B., Ulanova, A.V., Orlov, A.A., Amburkin, K.M., and Nikiforov, A.Y., Measurement system for test memory cells based on keysight B1500A semiconductor device analyzer running LabVIEW software, in Proceedings of the 2017 International Siberian Conference on Control and Communications, SIBCON 2017, Astana, Kazakhstan, 29–30 June, 2017.https://doi.org/10.1109/SIBCON.2017.7998542
Amburkin, K., Chukov, G., Elesin, V., Nazarova, G., and Usachev, N., Measurement issues of radio frequency integrated circuits with digital control at radiation testing, MATEC Web of Conf., 2016, vol. 79, p. 01041.
Kalashnikov, O.A. and Nikiforov, A.Y., TID behavior of complex multifunctional VLSI devices, in Proceedings of the International Conference on Microelectronics, ICM2014, pp. 455–458.
Yuw, J., Bias dependence of total dose effect of partially depleted SOI MOSFET, High Energy Phys. Nucl. Phys., 2007, vol. 31, no. 9, pp. 819–822.
Kessarinskiy, L.N., Boychenko, D.V., Petrov, A.G., Nekrasov, P.V., Sogoyan, A.V., Anashin, V.S., and Chubunov, P.A., Compendium of tid comparative results under X-ray, gamma and linac irradiation, in Proceedings of the 2014 IEEE Radiation Effects Data Workshop, REDW 2014, Paris, France, Jul. 14–18, 2014, pp. 236–238.https://doi.org/10.1109/REDW.2014.7004562
Artamonov, A.S., Sangalov, A.A., Nikiforov, A.Y., Telets, V.A., and Boychenko, D.V., The new gamma irradiation facility at the National Research Nuclear University MEPhI, in Proceedings of the 2014 IEEE Radiation Effects Data Workshop, REDW 2014, Paris, France, Jul. 14–18, 2014, pp. 258–261.https://doi.org/10.1109/REDW.2014.7004600
Petrova, E.V., Komarova, N.A., Cherniak, M.E., Ulanova, A.V., and Nikiforov, A.Y., Hardware/software solution for optocouplers with output MOSFET transistors based on National Instruments PXI-platform, in Proceedings of the 2016 International Siberian Conference on Control and Communications, SIBCON 2016, Moscow, May 12–14, 2016. https://doi.org/10.1109/SIBCON.2016.7491764
Davydov, G.G., Kolosova, A.S., Boychenko, D.V., and Pechenkin, A.A., The critical elements of the modern transceiver ICs upon space radiation exposure, in Proceedings of the 14th European Conference on Radiation and its Effects on Components and Systems, RADECS-2015, Moscow, Sept. 14–18, 2015. https://doi.org/10.1109/RADECS.2015.7365673
Kessarinskiy, L.N., Davydov, G.G., Boychenko, D.V., Artamonov, A.S., Nikiforov, A.Y., and Yashanin, I.B., X-ray grading procedure for conventional 65-nm CMOS technology, in Proceedings of the 2017 International Siberian Conference on Control and Communications, SIBCON 2017, Astana, Kazakhstan, June 29–30, 2017.https://doi.org/10.1109/SIBCON.2017.7998518
Boychenko, D.V., Kalashnikov, O.A., Karakozov, A.B., and Nikiforov, A.Y., Rational methodological approach to evaluation of dose resistance of CMOS microcircuits with respect to low intensity effects, Russ. Microelectron., 2015, vol. 44, no. 1, pp. 1–7.
Translated by Yu. Kornienko
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Chernyak, M.E., Ranneva, E.V., Ulanova, A.V. et al. Method for Determining the Most Sensitive Region of an Optocoupler Chip under X-ray-Induced Dose Effects. Russ Microelectron 48, 415–421 (2019). https://doi.org/10.1134/S1063739719060039
- dose effects
- and X-ray methods