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Russian Microelectronics

, Volume 47, Issue 6, pp 443–448 | Cite as

Stacked Gate FinFET with Gate Extension for Improved Gate Control

  • Sangeeta MangeshEmail author
  • Pradeep Chopra
  • Krishan Saini
Article
  • 4 Downloads

Abstract

Referring to the experimental data available, a modified pile gate bulk FinFET device with trapezoidal cross-section is analyzed through this paper. Two special features of Pile gate FinFET are trapezoidal cross-section and extended gate. The comprehensive performance metrics analysis justifies its improved performanceas compared to normal bulk FinFET. The device design analysis is also carried out for varying fin height, length of extension of the gate structure and bottom gate material work function. Thermal reliability is justified through analyzing electrical propertied for varying temperatures. The performance metrics considered for the analysis include threshold voltage, transconductance Subthreshold Slope, Drain Induced Barrier Lowering and Gate Induced Drain Leakage current.

REFERENCES

  1. 1.
    Moore, M., 2015.Google Scholar
  2. 2.
    Ferain, I., Colinge, C.A., and Colinge, J.-P., Nature (London, UK), 2011, vol. 479, p. 310.CrossRefGoogle Scholar
  3. 3.
    Manoj, C.R., Nagpal, M., Varghese, D., and Rao, V.R., IEEE Trans. Electron. Dev., 2008, vol. 55, p. 609.CrossRefGoogle Scholar
  4. 4.
    Horiguchi, N., Parvais, B., Chiarella, T., Collaert, N., Veloso, A., Rooyackers, R., Verheyen, P., Witters, L., Redolfi, A., de Keersgieter, A., Demand, M., Jurczak, M., Vandervorst, W., Hoffmann, T., and Biesemans, S., in Semiconductor-On-Insulator Materials for Nanoelectronics Applications, Berlin, Heidelberg: Springer, 2011.Google Scholar
  5. 5.
    Song, J., Yu, B., Yuan, Y., and Taur, Y., in IEEE Trans. Circuits Syst. I Regul. Pap., 2009.Google Scholar
  6. 6.
    Doris, B., Desalvo, B., Cheng, K., Morin, P., and Vinet, M., Solid State Electron., 2016, vol. 117, p. 37.CrossRefGoogle Scholar
  7. 7.
    Kumar Pal, P., Kumar Kaushik, B., and Dasgupta, S., IEEE Trans. Electron. Dev., 2015, vol. 62, p. 1105.CrossRefGoogle Scholar
  8. 8.
    Jha, N.K. and Chen, D., Nanoelectronic Circuit Design, New York: Springer, 2011.CrossRefGoogle Scholar
  9. 9.
    Vidya, V. and Sciences, C., Spring, 2007.Google Scholar
  10. 10.
    Selberherr, S., Microelectron. Reliab., 1984, vol. 24, p. 225.CrossRefGoogle Scholar
  11. 11.
    Jae, T. and Liu, K., 2012.Google Scholar
  12. 12.
    Ernst, T. and Deleonibus, S., in Proceedings IEEE International SOI Conference, 2006, p. 200.Google Scholar
  13. 13.
    Bhattacharya, D. and Jha, N.K., Adv. Electron., 2014, vol. 2014, p. 1.CrossRefGoogle Scholar
  14. 14.
    Editor, E.T., EE Times (n.d.).Google Scholar
  15. 15.
    Han, J.W., Wong, H.Y., Il Moon, D., Braga, N., and Meyyappan, M., IEEE Trans. Electron Dev., 2016, vol. 63, p. 3432.CrossRefGoogle Scholar
  16. 16.
    Cogenda, (n.d.).Google Scholar
  17. 17.
    Fasarakis, N., Tassis, D.H., Tsormpatzoglou, A., Papathanasiou, K., and Dimitriadis, C.A., in Proceedings of the IEEE Conference, 2013, p. 13.Google Scholar
  18. 18.
    Standard, G., 2015, vol. 1.Google Scholar
  19. 19.
    Sinha, S., Yeric, G., Chandra, V., Cline, B., and Yu Cao, in Proceedings of the 49th Design Automation Conference DAC’12, 2012, p. 283.Google Scholar
  20. 20.
    Fasarakis, N., Tassis, D.H., Tsormpatzoglou, A., Papathanasiou, K., and Dimitriadis, C.A., 2013, p. 13.Google Scholar
  21. 21.
    Fasarakis, N., Karatsori, T.A., Tsormpatzoglou, A., Tassis, D.H., Papathanasiou, K., Bucher, M., Ghibaudo, G., and Dimitriadis, C.A., IEEE Trans. Electron Dev., 2014, vol. 61, p. 324.CrossRefGoogle Scholar
  22. 22.
    Mohapatra, S.K., Pradhan, K.P., Sahu, P.K., and Kumar, M.R., Adv. Nat. Sci. Nanosci. Nanotechnol., 2014, vol. 5.Google Scholar
  23. 23.
    Eng, Y.C., Hu, L., Chang, T.F., Hsu, S., Chiou, C.M., Wang, T., Yang, C.W., Lin, C.T., Wang, I.C., Chen, M.C., Lai, A., Wang, P.W., Hsu, C.J., Pang, W.Y., Kuo, C.H., Cheng, O., and Wang, C.Y., IEEE J. Electron Dev. Soc., 2017, vol. 5, p. 18.Google Scholar
  24. 24.
    Boukortt, N., Hadri, B., Patanè, S., Caddemi, A., and Crupi, G., Silicon, 2016, vol. 8, p. 497.CrossRefGoogle Scholar
  25. 25.
    Jin, M., Liu, C., Kim, J., Kim, J., Shim, H., Kim, K., Kim, G., Lee, S., Uemura, T., Chang, M., An, T., Park, J., and Pae, S., in Proceedings of the IEEE International Electron Devices Meeting IEDM, 2016, p. 380.Google Scholar
  26. 26.
    Mertens, H., Ritzenthaler, R., Chasin, A., Schram, T., Kunnen, E., Hikavyy, A., Ragnarsson, L.A., Dekkers, H., Hopf, T., Wostyn, K., Devriendt, K., Chew, S.A., Kim, M.S., Kikuchi, Y., Rosseel, E., et al., in Proceedings of the International Electron Devices Meeting IEDM, 2017. Google Scholar
  27. 27.
    Lee, B.H., Oh, J., Tseng, H.H., Jammy, R., and Huff, H., Mater. Today, 2006, vol. 9, p. 32.CrossRefGoogle Scholar
  28. 28.
    Lakhlef, A. and Benfdila, A., in Proceedings of the International Conference on Microelectronics ICM, 2014, p. 213.Google Scholar

Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • Sangeeta Mangesh
    • 1
    Email author
  • Pradeep Chopra
    • 2
  • Krishan Saini
    • 3
  1. 1.Department of Electronics Engineering JSS Academy of Technical EducationNoidaIndia
  2. 2.Ajay Kumar Garg Engineering CollegeGhaziabadIndia
  3. 3.National Physical LaboratoriesNew DelhiIndia

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