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Russian Microelectronics

, Volume 47, Issue 7, pp 465–467 | Cite as

An Integrated High-Capacitance Varicap Based on Porous Silicon

  • S. P. TimoshenkovEmail author
  • A. N. Boyko
  • D. S. Gaev
  • R. M. Kalmykov
Article
  • 3 Downloads

Abstract

The potential for use of porous silicon in designing varicaps with high capacitance ratios satisfying the requirements of microelectronics and microsystems engineering is considered. The technique for the fabrication of capacitor structures via the electrodeposition of copper onto porous silicon is presented. The morphological features of the obtained structures are examined and the specific capacitance of varicaps is determined. The prospects for the application of varicaps based on porous silicon in integrated electronics are outlined.

Keywords:

porous silicon integrated capacitor varicap electrodeposition electrochemical anodization of silcon 

Notes

ACKNOWLEDGMENTS

This study was supported financially by the Russian Foundation for Basic Research (grant no. 16-38-50099).

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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • S. P. Timoshenkov
    • 1
    Email author
  • A. N. Boyko
    • 1
  • D. S. Gaev
    • 2
  • R. M. Kalmykov
    • 2
  1. 1.National Research University of Electronic TechnologyMoscowRussia
  2. 2.Berbekov Kabardino-Balkarian State UniversityNalchikRussia

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