Russian Microelectronics

, Volume 47, Issue 7, pp 468–471 | Cite as

Calculation of the Influence of Shunt Parameters on the dV/dt Effect in Power Photothyristors

  • D. S. SilkinEmail author
  • V. P. Paderov


The influence of the topological parameters of shunts in the cathode regions of a photothyristor on the dV/dt effect is calculated. The analytical condition that makes it possible to determine, in the first approximation, the region of the onset of the structure triggering caused by the dV/dt effect is obtained. When the forward voltage increases on the thyristor structure in the off state, the bias current flowing through the barrier capacitance of the inversely biased p-base-n-base junction causes a spontaneous triggering of the structure. This is the core of the dV/dt effect in thyristors.


photothyristor amplifying gate dV/dt effect 



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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  1. 1.Ogarev National Research Mordova State UniversitySaranskRussia

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