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Russian Microelectronics

, Volume 47, Issue 7, pp 468–471 | Cite as

Calculation of the Influence of Shunt Parameters on the dV/dt Effect in Power Photothyristors

  • D. S. SilkinEmail author
  • V. P. Paderov
Article
  • 5 Downloads

Abstract

The influence of the topological parameters of shunts in the cathode regions of a photothyristor on the dV/dt effect is calculated. The analytical condition that makes it possible to determine, in the first approximation, the region of the onset of the structure triggering caused by the dV/dt effect is obtained. When the forward voltage increases on the thyristor structure in the off state, the bias current flowing through the barrier capacitance of the inversely biased p-base-n-base junction causes a spontaneous triggering of the structure. This is the core of the dV/dt effect in thyristors.

Keywords:

photothyristor amplifying gate dV/dt effect 

Notes

REFERENCES

  1. 1.
    Blicher, A., Thyristor Physics, New York: Springer, 1976.CrossRefGoogle Scholar
  2. 2.
    Lutz, J., Schlangenotto, H., Scheuermann, U., and de Doncker, R., Semiconductor Power Devices, Physics, Characteristics, Reliability, Heidelberg: Springer, 2011.CrossRefGoogle Scholar
  3. 3.
    Niedernostheide, F.-J., Schulze, H.-J., and Kellner-Werdehausen, U., Self-protection functions in direct light-triggered high-power thyristors, Microelectron. J., 2001, vol. 32, nos. 5–6, pp. 457–462.CrossRefGoogle Scholar
  4. 4.
    Baliga, B.J., Fundamentals of Power Semiconductor Devices, New York: Springer, 2008.CrossRefGoogle Scholar
  5. 5.
    Goryachkin, Yu.V., Development of models of three-dimensional elementary cells of a powerful pulsed thyristor TI183-2000 in Synopsys TCAD, Elektron. Inform. Tekhnol., 2012, no. 1. http://fetmag.mrsu.ru/ Accessed May 10, 2016.Google Scholar

Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  1. 1.Ogarev National Research Mordova State UniversitySaranskRussia

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