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Russian Microelectronics

, Volume 47, Issue 7, pp 472–478 | Cite as

Analyzing the Influence of Temperature on the Electrophysical Characteristics of a Complementary Pair of Vertical Bipolar Transistors

  • M. O. HrapovEmail author
  • A. V. Gluhov
  • V. A. Gridchin
  • S. V. Kalinin
Article
  • 2 Downloads

Abstract

The influence of temperature on the most important electrical parameters of a complementary bipolar pair of vertical transistors is numerically investigated in the thermodynamic and drift-diffusion models. The advantage of the thermodynamic model in analyzing high-power transistors due to the fact that this model takes into account the self-heating effect is demonstrated;. The simulation results are compared with the experimental characteristics of the test structures. The comparison shows that, for the current amplification factor β and the Early voltage VA, the computational error is less than 15%; for the critical parameter, the collector–emitter breakdown voltage VCE0, it is less than 2%, which is sufficient to use the thermodynamic model for practical purposes.

Keywords:

complementary vertical n–p–n and p–n–p transistors TCAD Sentaurus thermodynamic model collector–emitter breakdown voltage Early voltage and current amplification factor 

Notes

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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • M. O. Hrapov
    • 1
    Email author
  • A. V. Gluhov
    • 2
  • V. A. Gridchin
    • 1
  • S. V. Kalinin
    • 1
  1. 1.Novosibirsk State Technical UniversityNovosibirskRussia
  2. 2.Siberian State University of Informatics and TelecommunicationsNovosibirskRussia

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