Russian Microelectronics

, Volume 47, Issue 7, pp 498–503 | Cite as

Design Automation Technique of Silicon Bandgap Voltage Reference

  • V. G. IvanovEmail author
  • V. V. Losev


A formalized technique for the automated design of bandgap voltage reference (BVR) is proposed. The distinctive feature of the technique is the automation of the synthesis of the circuit engineering conceptions by the given parameters of the source, which considerably reduces the design time. Based on the developed technique by the 180-nm SOI technology, the circuit of the voltage reference source was designed. The obtained schematic solution has the following desired characteristics: the power supply suppression ratio at the frequencies of 1 kHz in the worst case is –60 dB and at the frequencies of 1 MHz is –44 dB, the maximum consumption current is 25 μA, the temperature coefficient is 24 ppm/°C in the temperature range from –70 to 150°C, and the ratio of changing the output voltage to changing the supply voltage is 354 μV/V in the range of supply voltage from 2.4 to 7 V.


bandgap voltage reference power supply rejection ratio temperature coefficient 



This work was financially supported by the Russian Foundation for Basic Research (contract no. 16-29-09588/16).


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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  1. 1.National Research University of Electronic Technology (MIET)ZelenogradMoscowRussia

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