Advertisement

Russian Microelectronics

, Volume 47, Issue 6, pp 381–387 | Cite as

Quality Control of a Multilayer Spin-Tunnel Structure with the Use of a Combination of Analytical Methods

  • O. S. TrushinEmail author
  • S. G. Simakin
  • S. V. Vasiliev
  • E. A. Smirnov
Article
  • 1 Downloads

Abstract

Several experimental methods for controlling the quality of the multilayer film structures used for the fabrication of magnetic tunneling junctions (MTJs) are considered. A multilayer magnetoresistive structure of the following composition is deposited using magnetron sputtering on a Singulus Timaris cluster tool: Ta/CuN/Ta/NiFe/IrMn/CoFe/Ru/CoFeB/MgO/CoFeB/Ta/Ru. A layer-by-layer elemental analysis of the composition of the deposited structure is carried out by the time of flight (TOF) secondary ion mass-spectrometry on a TOF.SIMS 5 installation. A cross section of the structure is analyzed using transmission electron microscopy (TEM) (Tecnai G2 F20 U-TWIN). The crystal structure of the layers is characterized using X-ray diffraction. A comparison of the data obtained using different analytical methods lets us estimate the accuracy of the analysis and the quality of the structure intended for further MTJ fabrication.

Notes

ACKNOWLEDGMENTS

The work was carried out under a state assignment of the Federal Agency of Scientific Organizations (FASO) of Russia on the equipment of the center for the collective use of the scientific equipment “Diagnostics of micro- and nanostructures” [5].

REFERENCES

  1. 1.
    Yoda, H., MRAM fundamentals and devices, in Handbook of Spintronics, Xu Yongbing, Awschalom, D., and Nitta, Yu., Eds., Heidelberg, New York, London: Springer, 2016, pp. 1031–1064.Google Scholar
  2. 2.
    Zaleski A. et al., The study of conductance in magnetic tunnel junctions with a thin MgO barrier: the effect of Ar pressure on tunnel magnetoresistance and resistance area product, J. Appl. Phys., 2012, vol. 111, pp. 033903-1–033903-5.CrossRefGoogle Scholar
  3. 3.
    Worledge, D. and Trouilloud, D.L., Magnetoresistance measurements of unpatterned magnetic tunnel junction wafers by current in-plane tunneling, Appl. Phys. Lett., 2003, vol. 83, pp. 84–86.CrossRefGoogle Scholar
  4. 4.
    Trushin, O., Simakin, S., and Vasiliev, S., Depth profiling of magnetic tunneling junction using ION TOF, in Tr. XXIII mezhdunarodnoi konferentsii Vzaimodeistvie ionov s poverkhnost’yu VIP2017 (Proceedings of the 23rd International Conference on Interaction of Ions with Surface, Moscow, Aug. 21–25, 2017), vol. 2, pp. 34–36.Google Scholar
  5. 5.
    http://nano.yar.ru.Google Scholar

Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • O. S. Trushin
    • 1
    Email author
  • S. G. Simakin
    • 1
  • S. V. Vasiliev
    • 1
  • E. A. Smirnov
    • 2
  1. 1.Yaroslavl Branch of the Institute of Physics and Technology, Russian Academy of SciencesYaroslavlRussia
  2. 2.Crocus NanoelectronicsMoscowRussia

Personalised recommendations