Advertisement

Russian Microelectronics

, Volume 47, Issue 6, pp 365–370 | Cite as

Controlling the Si(001) Surface Morphology upon Thermal Annealing in a Vacuum Chamber

  • E. E. RodyakinaEmail author
  • S. V. Sitnikov
  • D. I. Rogilo
  • A. V. Latyshev
Article
  • 5 Downloads

Abstract

The effect of homoepitaxial Si(001) growth on the surface morphology during the annealing of a substrate by passing a direct current is examined by in situ high-vacuum reflection electron microscopy at a temperature of 1100°С and ex situ atomic force microscopy. The nonmonotonic dependence of the average distance between step bunch on the atomic flow to the surface under the growth conditions and the monotonic behavior under the sublimation conditions are established. The increase in the average distance between pairs of inclined steps between the bunches at an external atomic flow comparable with the flow of atoms evaporated from the surface during sublimation is found.

Notes

ACKNOWLEDGMENTS

This study was supported by the Russian Foundation for Basic Research, project no. 16-32-60199 mol_a_dk. The experiments were conducted on the equipment of the Center for Collective Use Nanostructures.

REFERENCES

  1. 1.
    Misbah, C., Pierre-Louis, O., and Saito, Y., Crystal surfaces in and out of equilibrium: a modern view, Rev. Mod. Phys., 2010, vol. 82, pp. 981–1040.CrossRefGoogle Scholar
  2. 2.
    Latyshev, A.V., Litvin, L.V., and Aseev, A.L., Peculiarities of step bunching on Si(001) surface induced by DC heating, Appl. Surf. Sci., 1998, vols. 130–132, pp. 139–145.CrossRefGoogle Scholar
  3. 3.
    Gibbons, B.J., Nofsinger, J., and Pelz, J.P., Influence of Si deposition on the electromigtation induced step bunching instability on Si(111), Surf. Sci., 2005, vol. 575, pp. L51–L56.CrossRefGoogle Scholar
  4. 4.
    Rodyakina, E.E., Kosolobov, S.S., and Latyshev, A.V., Drift of adatoms on the (111) silicon surface under electromigration conditions, JETP Lett., 2011, vol. 94, no. 2, pp. 147–151.CrossRefGoogle Scholar
  5. 5.
    Gibbons, B.J., Nofsinger, J., and Pelz, J.P., Influence of Si deposition on the electromigtation induced step bunching instability on Si(111), Surf. Sci., 2005, vol. 575, pp. L51–L56.CrossRefGoogle Scholar
  6. 6.
    Rodyakina, E.E., Kosolobov, S.S., and Latyshev, A.V., Electromigration of silicon adatoms on silicon (111) surface, Vestn. NGU, Ser. Fiz., 2011, no. 6 (2), pp. 65–76.Google Scholar
  7. 7.
    Nielsen, J., Pelz, J.P., Hibino, H., Hu, C.-W., and Tsong I.S.T., Enhanced terrace stability for preparation of step-free Si(001)-(2 × 1), Phys. Rev. Lett., 2001, vol. 87, p. 136103.CrossRefGoogle Scholar
  8. 8.
    Sato, M., Uwaha, M., and Saito, Y., Evaporation and impigment effects on drift-induced step instabilities on a Si(001) vicinal face, Phys. Rev. B, 2005, vol. 72, p. 045401.CrossRefGoogle Scholar
  9. 9.
    Latyshev, A.V., Krasilnikov, A.B., and Aseev, A.L., In situ REM study of monoatomic step behaviour on the Si(111) surface during sublimation, Ultramicroscopy, 1993, vol. 48, no. 4, pp. 377–380.CrossRefGoogle Scholar
  10. 10.
    Latyshev, A.V., Atomic stages on the surface of silicon in the processes of sublimation, epitaxy, and phase transitions, Doctoral (Phys. Math.) Dissertation, 1996.Google Scholar
  11. 11.
    Rodyakina, E.E., Kosolobov, S.S., Sheglov, D.V., Nasimov, D.A., Se Ahn Song, and Latyshev A.V., Atomic steps on sublimating Si(001) surface observed by atomic force microscopy, Phys. Low Dim. Struct., 2004, vols. 1–2, pp. 9–18.Google Scholar
  12. 12.
    Popkov, V. and Krug, J., Dynamic phase transitions in electromigration-induced step bunching, Phys. Rev. B, 2006, vol. 73, p. 235430.CrossRefGoogle Scholar
  13. 13.
    Liu, D.J. and Weeks, J.D., Quantitative theory of current-induced step bunching on Si(111), Phys. Rev. B, 1998, vol. 57, no. 23, pp. 14891–14899.CrossRefGoogle Scholar
  14. 14.
    Frish, T. and Verga, A., Kinetic step bunching instability during surface growth, Phys. Rev. Lett., 2005, vol. 94, p. 226102.CrossRefGoogle Scholar
  15. 15.
    Krug, J., Tonchev, V., Stoyanov, S., and Pimpinelli, A., Scaling properties of step bunches induced by sublimation and related mechanisms, Phys. Rev. B, 2005, vol. 71, p. 045412.CrossRefGoogle Scholar

Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • E. E. Rodyakina
    • 1
    • 2
    Email author
  • S. V. Sitnikov
    • 1
  • D. I. Rogilo
    • 1
  • A. V. Latyshev
    • 1
    • 2
  1. 1.Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian BranchNovosibirskRussia
  2. 2.Novosibirsk State UniversityNovosibirskRussia

Personalised recommendations