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Russian Microelectronics

, Volume 47, Issue 6, pp 388–392 | Cite as

Investigation of Alloyed Ohmic Contacts in Epitaxial Tellurium-Doped Gallium Arsenide Layers

  • V. I. Egorkin
  • V. E. Zemlyakov
  • A. V. NezhentsevEmail author
  • V. I. Garmash
  • N. A. Kalyuzhnyi
  • S. A. Mintairov
Article
  • 2 Downloads

Abstract

The conditions for the growth of epitaxial layers are considered and the resistance of alloyed ohmic contacts to tellurium-doped gallium arsenide layers is studied. The use of the (AuGe eutectic alloy)-Ni–Au composition alloy of ohmic contacts to the gallium arsenide layers with electron conductivity, including use as a contact layer of a narrow-band (In0.5Ga0.5As), makes it possible to achieve a resistance of 10–7 Ohm cm2, in the best case; however, this leads to a deterioration of the surface morphology. In this paper, we study the issues of doping the GaAs contact layer by tellurium to the maximum concentration of 2.5 × 1019 cm–3. In this case, the resistance of the ohmic contacts proves to be less than 5 × 10–8 Оhm cm2, simultaneously with the improvement of the semiconductor’s surface morphology.

Notes

ACKNOWLEDGMENTS

The work was supported by the Ministry of Science and Education of Russia (agreement no. 14.578.21.0212, unique identifier RFMEFI57816X0212).

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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • V. I. Egorkin
    • 1
  • V. E. Zemlyakov
    • 1
  • A. V. Nezhentsev
    • 1
    Email author
  • V. I. Garmash
    • 1
  • N. A. Kalyuzhnyi
    • 2
  • S. A. Mintairov
    • 2
  1. 1.Moscow Institute of Electronic TechnologyMoscowRussia
  2. 2.Ioffe Physical Technical InstituteSt. PetersburgRussia

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