Russian Microelectronics

, Volume 44, Issue 2, pp 89–100 | Cite as

A tunnel field-effect transistor with a graphene derivatives (COH) n -(CF) n -(CH) n three-layer quantum well with the middle (CF) n drain layer

  • V. A. Zhukov
  • V. G. Maslov


A tunnel field-effect quantum-well nanotransistor, in which the drive voltage of 0.6 V is applied to the barriers surrounding the well, and electrons are drained from the quantum well, is considered. Electrons are tunneled into the quantum well through the first half of the double-humped tunnel barrier (double heterojunction) formed by a three-layer sandwich of broad-band 2D semiconductors (graphene derivatives, such as perhydroxy graphene (COH) n , fluorographene (CF) n , and graphane (CH) n ) with sharply different levels of the bottoms of the conduction band. The middle fluorographene (CF) n layer has the lowest conduction band bottoms, which forms the quantum well with a depth of ∼3 eV and a width of ∼0.6 nm in the common tunnel potential barrier with a width of 1.8 nm and serves as a drain channel for electrons. The source and gate metallic electrodes are adjacent to the outer layers of the sandwich 2D semiconductors, i.e., perhydroxy graphene (COH) n and graphane (CH) n , respectively, forming the common gate sandwich of 20 × 20 nm2 in size. The metallic drain electron with a width of 10 nm and a potential, which is 1 V higher than that of the first (source) electrode, is adjacent to the middle fluorographene (CF) n layer, which extends outside the sandwich, being 35 nm wider than the outer 2D semiconductor layers of the inner three-layer sandwich. The gate opening potential is 0.62 V. The maximum working voltage I sd = 2 × 10−5 A. The drain off-state current is zero, and the leakage on-state current through the gate electrode is I g = I leak ∼ 10−10 A. The quantum capacitance of the transistor enables its operation at a frequency of up to 1012 Hz.


RUSSIAN Microelectronics Tunnel Barrier Energy Band Diagram Quantum Capacitance Double Barrier 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    Seabaugh, A.C. and Zhang, Q., Low-voltage tunnel transistors for beyond CMOS logic, Proc. IEEE, 2010, vol. 98, no. 12, pp. 2095–2110.CrossRefGoogle Scholar
  2. 2.
    Ionescu, A.A. and Riel, H., Tunnel field-effect transistors as energy-efficient electronic switches, Nature, 2011, vol. 479, no. 17, pp. 329–337.CrossRefGoogle Scholar
  3. 3.
    Britnell, L., Gorbachev, R.V., Jalil, R., Belle, B.D., et al., Field-effect tunneling transistor based on vertical graphene heterostructures, Science, 2012, vol. 335, no. 6071, pp. 947–950.CrossRefGoogle Scholar
  4. 4.
    Svintsov, D.A., Vyurkov, V.V., Lukichev, V.F., and Orlikovsky, A.A., Tunnel field-effect transistors with graphene channels, Semiconductors, 2013, vol. 47, no. 2, pp. 279–284.CrossRefGoogle Scholar
  5. 5.
    Svintsov, D., Vyurkov, V., Orlikovsky, A., Ryzhii, V., and Otsuji, T., All-graphene field-effect transistor based on lateral tunneling, J. Phys. D: Appl. Phys., 2014, vol. 47, no. 9, p. 094002.CrossRefGoogle Scholar
  6. 6.
    Geim, A.K. and Grigorieva, I.V., Van der Waals Heterostructures. Cited August 2, 2014.
  7. 7.
    Chang, L.L. and Esaki, L., Tunnel triode—a tunneling base transistor, Appl. Phys. Lett., 1977, vol. 31, no. 10, p. 687.CrossRefGoogle Scholar
  8. 8.
    Sze, S.M. and Ng, K.K., Physics of Semiconductor Devices, New York: Wiley, 1981, vol. 2, pp. 145–146.Google Scholar
  9. 9.
    Luryi, S., Quantum capacitance devices, Appl. Phys. Lett., 1988, vol. 52, no. 6, pp. 501–503.CrossRefGoogle Scholar
  10. 10.
    Fana, Z.Y. and Li, J., AlGaN/GaN/AlN quantum-well field-effect transistors with highly resistive AlN epilayers, Appl. Phys. Lett., 2006, vol. 88, no. 7, p. 073513.CrossRefGoogle Scholar
  11. 11.
    Kendall, R.A., Aprà, E., Bernholdt, D.E., Bylaska, E.J., Dupuis, M., Fann, G.I., Harrison, R.J., Ju, J., Nichols, J.A., Nieplocha, J., Straatsma, T.P., Windus, T.L., and Wong A.T., High performance computational chemistry: an overview of NWChem a distributed parallel application, Comput. Phys. Commun., 2000, vol. 128, nos. 1–2, pp. 260–283.CrossRefzbMATHGoogle Scholar
  12. 12.
    Huzinaga, S., Andzelm, J., Klobukowski, M., Radzio-Andzelm, E., Sakai, Y., and Tatewaki, H., Gaussian Basis Set for Molecular Calculations, Amsterdam: Elsevier, 1984.Google Scholar
  13. 13.
    Kittel, Ch., Elementary Solid State Physics, New York: Wiley, 1962.Google Scholar
  14. 14.
    Kasap, S.O., Principles of Electronic Materials and Devices, New York: McGraw-Hill, 2002, http://Materials.Usask.Ca Google Scholar
  15. 15.
    Bardeen, J., Theory of the work functions. II: The surface double layer, Phys. Rev., 1936, vol. 49, no. 9, pp. 653–663.CrossRefzbMATHGoogle Scholar
  16. 16.
    Bardeen, J., The image and van der Waals forces at a metallic surface, Phys. Rev., 1940, vol. 58, no. 8, pp. 727–735.CrossRefzbMATHGoogle Scholar
  17. 17.
    Juretchke, H.J., Exchange potential in the surface region of a free electron metal, Phys. Rev., 1953, vol. 92, no. 5, pp. 1140–1144.CrossRefGoogle Scholar
  18. 18.
    Simons, J.G., Duke, C.B., and Kane, E.O., in Tunneling Phenomena in Solids, Burstein, E. and Lundquist, S., Eds., New York: Plenum Press, 1969, ch. X, IV, and I.Google Scholar
  19. 19.
    Seitz, F., The Modern Theory of Solids, New York: McGraw-Hill, 1940.zbMATHGoogle Scholar
  20. 20.
    Zhukov, V.A. and Maslov, V.G., I-V characteristics and the spectrum width during electron tunneling through nanosandwiches W-WO2-(Au147)-Al2O3-Al and Nd-Nd2O3-(Au55)-Nd2O3-Nd. Part I: Quantumchemical calculation of energies of orbitals for anions of nanoclusters Au55 and Au147, Russ. Microelectron., 2012, vol. 41, no. 2, pp. 122–131.CrossRefGoogle Scholar
  21. 21.
    Zhukov, V.A. and Maslov, V.G., A model of a metallic quantum nanotransistor with a Coulomb-blockage gate in “magic” Au55 and Ag55 nanocrystals with speed of 1011 Hz, Russ. Microelectron., 2013, vol. 42, no. 2, pp. 134–145.CrossRefGoogle Scholar
  22. 22.
    Washburn, S. and Webb, R.A., Aharonov-Bohm effect in normal metals. Quantum coherence and transport, Adv. Phys., 1986, vol. 35, no. 4, pp. 375–422.CrossRefGoogle Scholar
  23. 23.
    Imry, Y., Introduction to Mesoscopic Physics, New York: Oxford University Press, 1997.Google Scholar
  24. 24.
    Torres, J.A., Pascual, J.I., and Sáenz, J.J., Theory of conduction through narrow constriction in a three-dimensional electron gas, Phys. Rev. B: Solid State, 1994, vol. 49, no. 23, pp. 16581–16584.CrossRefGoogle Scholar

Copyright information

© Pleiades Publishing, Ltd. 2015

Authors and Affiliations

  1. 1.St. Petersburg Institute for Informatics and AutomationRussian Academy of SciencesSt. PetersburgRussia
  2. 2.St. Petersburg State University of Information Technologies, Mechanics, and OpticsSt. PetersburgRussia
  3. 3.St. Petersburg State Polytechnical UniversitySt. PetersburgRussia

Personalised recommendations