Russian Microelectronics

, Volume 43, Issue 1, pp 15–20 | Cite as

A distribution of Ga+ ions in a silicon substrate for nano-dimensional masking

  • I. I. Bobrinetskii
  • V. K. Nevolin
  • K. A. Tsarik
  • A. A. Chudinov
Article

Abstract

A nano-dimensional doping method of near-surface silicon layers using the focused ion beam was studied by software tools based on mathematical calculations of ion ranges in crystals. The sizes of local doping regions and concentrations of impurity atoms as function of real process parameters of the nano-dimensional exposure to the ion gallium beam are calculated. Theoretical boundaries of process doping parameters, taking silicon sputtering into consideration are determined.

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Copyright information

© Pleiades Publishing, Ltd. 2014

Authors and Affiliations

  • I. I. Bobrinetskii
    • 1
  • V. K. Nevolin
    • 1
  • K. A. Tsarik
    • 1
  • A. A. Chudinov
    • 1
  1. 1.National Research Institute MIETMoscowRussia

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