A distribution of Ga+ ions in a silicon substrate for nano-dimensional masking
A nano-dimensional doping method of near-surface silicon layers using the focused ion beam was studied by software tools based on mathematical calculations of ion ranges in crystals. The sizes of local doping regions and concentrations of impurity atoms as function of real process parameters of the nano-dimensional exposure to the ion gallium beam are calculated. Theoretical boundaries of process doping parameters, taking silicon sputtering into consideration are determined.
Unable to display preview. Download preview PDF.
- 2.Shearn, M., Sun, X., David Henry, M., Yariv, A., and Scherer, A., Advanced plasma processing: etching, deposition and wafer bonding techniques for semiconductor applications, Semiconductor Technologies: Etching in Tech., 2010, Ch. 5, p. 79.Google Scholar
- 3.Nikonenko, V.A., Matematicheskoe modelirovanie tekhnologicheskikh protsessov: Modelirovanie v srede MathCAD. Praktikum (Mathematical Modeling of Manufacturing Processes: Simulation in the MathCAD Environment. Practical Work), Kuznetsov, G.D., Ed., Moscow: MISiS, 2001.Google Scholar
- 4.Wittman, R., Miniaturization problems in CMOS technology: Investigation of doping profiles and reliability, PhD thesis. Technische Universitat Wien, 2010. URL: http://www.iue.tuwien.ac.at/phd/wittmann/diss.html (application data 31.05.2013).Google Scholar