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Russian Microelectronics

, Volume 42, Issue 3, pp 160–164 | Cite as

Field-effect transistor with nanowire channel based on heterogeneously doped SOI

  • S. V. Amitonov
  • D. E. Presnov
  • V. I. Rudakov
  • V. A. Krupenin
Article

Abstract

The article presents production methods and test results of field-effect transistor based on silicon nanowire made of heterogeneously arsenic-doped silicon on insulator (SOI). Dopant concentration has been varied over the depth of the silicon layer with a depth of 100 nm from higher than 1020 cm−3 to about 1017 cm−3. The field-effect transistor was manufactured from SOI using electron beam lithography and reactive ion etching. The upper highly conducting part of silicon layer has been used as a substrate for input electrodes and contact pads. The lower sublayer has been used for the formation of semiconductor nanowire. The current-voltage and gate characteristics of the transistor have been measured at 77 and 300 K. The possibility of using a field-effect transistor based on silicon nanowire as a highly sensitive local field-effect and charge sensor with nanometric spatial resolution for application in various fields of physics, technology and medicine has been analyzed.

Keywords

Silicon Layer RUSSIAN Microelectronics Field Effect Transistor Silicon Nanowire Isotropic Etching 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    Cui, Y. et al., Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species, Science, 2001, vol. 293, no. 5533, pp. 1289–1292.CrossRefGoogle Scholar
  2. 2.
    Stern, E. et al., Label-Free Immunodetection with CMOS-Compatible Semiconducting Nanowires, Nature, 2007, vol. 445, no. 7127, pp. 519–522.CrossRefGoogle Scholar
  3. 3.
    Patolsky, F. et al., Electrical Detection of Single Viruses, Proceedings of the National Academy of Sciences of the United States of America, 2004, vol. 101, no. 39, pp. 14017.CrossRefGoogle Scholar
  4. 4.
    Curreli, M. et al., Real-Time, Label-Free Detection of Biological Entities Using Nanowire-Based FETs, IEEE Transactions on Nanotechnology, 2008, vol. 7, pp. 651–667.CrossRefGoogle Scholar
  5. 5.
    Stern, E. et al., Label-Free Electronic Detection of the Antigen-Specific T-Cell Immune Response, Nano Lett., 2008, vol. 8, no. 10, pp. 3310–3314.CrossRefGoogle Scholar
  6. 6.
    Salfi, J. et al., Direct Observation of Single-Charge-Detection Capability of Nanowire Field-Effect Transistors, Nature Nanotech., 2010, vol. 5, no. 10, pp. 737–741.CrossRefGoogle Scholar

Copyright information

© Pleiades Publishing, Ltd. 2013

Authors and Affiliations

  • S. V. Amitonov
    • 1
  • D. E. Presnov
    • 2
  • V. I. Rudakov
    • 3
  • V. A. Krupenin
    • 1
    • 4
  1. 1.Faculty of PhysicsMoscow State UniversityMoscowRussia
  2. 2.Institute of Nuclear PhysicsMoscow State UniversityMoscowRussia
  3. 3.Institute of Physics and Technology, Yaroslavl AffiliateRussian Academy of SciencesYaroslavlRussia
  4. 4.Institute for Nanotechnologies of MicroelectronicsRussian Academy of SciencesMoscowRussia

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