Russian Microelectronics

, Volume 42, Issue 2, pp 102–112 | Cite as

A model of a metallic quantum nanotransistor with a Coulomb-blockage gate in “magic” Au55 and Ag55 nanocrystals with speed of 1011 Hz

  • V. A. Zhukov
  • V. G. Maslov


A model of a parallel metallic quantum nanotransistor with a Coulomb-blockage gate in “magic” nanocrystals Au55 and Ag55 with the speed of 1011 Hz having sizes of 100 × 100 × 12 nm3 is suggested and calculated. It is shown that the gate-opening threshold for this model with the source-drain potential of 2.74 V is 0.2 V, and the total current of 2500 elementary single-electron nanotransistors connected in parallel is 2 × 10−5 A, which is comparable with a current in terahertz semiconductor nanotransistors. It is shown that the charge amplification coefficient is K q ∼ 1, while the power amplification coefficient is K w ∼ 13. When using the inductive-capacitive load, a similar nanotransistor could be an element of an integrated circuit—radiation generator with wavelength λ = 3–6 mm and specific power of ∼104 W/cm2 with efficiency of ∼85–90%.


High Occupied Molecular Orbital RUSSIAN Microelectronics Image Force Tunnel Barrier Gate Electrode 
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© Pleiades Publishing, Ltd. 2013

Authors and Affiliations

  1. 1.St. Petersburg Institute of Information Science and AutomationRussian Academy of SciencesSt. PetersburgRussia
  2. 2.St. Petersburg State University of Information Technologies, Mechanics, and OpticsSt. PetersburgRussia

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