Russian Microelectronics

, Volume 41, Issue 3, pp 172–180 | Cite as

Current-voltage characteristic and the spectrum width of electrons tunneling through W-WO2-(Au 147 )-Al2O3-Al and Nd-Nd2O3-(Au 55 )-Nd2O3-Nd nanosandwiches. Part II: Construction and analysis of 1D models for 3D nanosandwiches

  • V. A. Zhukov
  • V. G. Maslov


This is the second part of the series of two articles devoted to the analysis of electron tunneling through magic nanoclusters of Au55 and Au147. Models of 1D projections of W-WO2-(Au 147 )-Al2O3-Al and Nd-Nd2O3-(Au 55 )-Nd2O3-Nd 3D tunnel nanostructures are constructed with the use of the highest occupied molecular orbital (HOMO) levels \(E_{HOMO^ - } \) of the anions of the nanoclusters of Au55 and Au147, and the potentials of Au, W, Al, and Nd atoms calculated in the first part of this study. The levels of the bottom of the potential wells of 1D structures are chosen so that they include resonance energy levels coinciding with the anion level \(E_{HOMO^ - } \) for an appropriate 3D structure (Au 147 or Au 55 ). With regard to the potentials in the structures of a nanocapacitor and the image forces, the current-voltage characteristic (CVC) and the width of the resonance peak in the spectrum of tunneling electrons are calculated as a function of the potential difference across the external electrodes of metal-metal nanodiodes. A scheme of a hypothetical high-frequency nanoscale metal transistor is proposed that is based on a cluster of Au147 that does not produce hot electrons.


High Occupied Molecular Orbital High Occupied Molecular Orbital RUSSIAN Microelectronics Image Force Tunnel Barrier 
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Copyright information

© Pleiades Publishing, Ltd. 2012

Authors and Affiliations

  1. 1.St. Petersburg Institute of Information Science and AutomationRussian Academy of SciencesSt. PetersburgRussia
  2. 2.St. Petersburg State University of Information Technologies, Mechanics, and OpticsSt. PetersburgRussia

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