Russian Microelectronics

, Volume 39, Issue 3, pp 199–209 | Cite as

Low temperature pulsed gas-phase deposition of thin layers of metallic ruthenium for micro- and nanoelectronics: Part 2. Kinetics of the growth of ruthenium layers

  • V. Yu. Vasilyev
Thin Films


Experimental data of growth kinetics of layers of ruthenium in a temperature range of 110–350°C by pulsed deposition from the gas phase with the participation of the carbonyl-diene precursor complex Ru(CO)3(C6H8), as well as NH3 and N2O as the second reagent are generalized.


Ruthenium Deposition Rate Atomic Layer Deposition RUSSIAN Microelectronics Tricarbonyl 
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© Pleiades Publishing, Ltd. 2010

Authors and Affiliations

  1. 1.Department of semiconductor devices and microelectronics (SDaME)Novosibirsk State Technical UniversityNovosibirskRussia

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