Abstract
A formalized method is presented for the circuit design of wideband low-noise amplifiers (LNAs) for RF applications. For a variety of LNAs thus obtained, a comparative performance analysis is performed by computer simulation in the frequency domain, involving optimization of small-signal LNA models. Optimal designs are thus identified showing a low reflection coefficient and a high gain over a wide frequency range extending to several gigahertz. Account is taken of limitations imposed by existing manufacturing technologies. For the sake of simplicity, the LNA configurations considered do not include frequency-selective networks.
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Original Russian Text © E.V. Balashov, A.S. Korotkov, 2008, published in Mikroelektronika, 2008, Vol. 37, No. 4, pp. 300–314.
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Balashov, E.V., Korotkov, A.S. Comparative analysis of wideband CMOS low-noise amplifiers for the RF range. Russ Microelectron 37, 264–276 (2008). https://doi.org/10.1134/S1063739708040070
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DOI: https://doi.org/10.1134/S1063739708040070