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Russian Microelectronics

, Volume 37, Issue 1, pp 41–46 | Cite as

Estimating IC susceptibility to single-event latchup

  • A. I. Chumakov
  • A. A. Pechenkin
  • A. N. Egorov
  • O. B. Mavritsky
  • S. V. Baranov
  • A. L. Vasil’ev
  • A. V. Yanenko
Radiation-Effect Modeling and Simulation

Abstract

The results are presented of a computer and physical simulation concerned with the estimation of CMOS-circuit susceptibility to single-event latchup. A laser-simulation procedure is proposed and tested in which only the most sensitive areas are irradiated. The estimates are found to agree with the measurements.

PACS numbers

85.40-e 

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Copyright information

© Pleiades Publishing, Ltd. 2008

Authors and Affiliations

  • A. I. Chumakov
    • 1
  • A. A. Pechenkin
    • 1
  • A. N. Egorov
    • 1
  • O. B. Mavritsky
    • 1
  • S. V. Baranov
    • 1
  • A. L. Vasil’ev
    • 1
  • A. V. Yanenko
    • 1
  1. 1.Specialized Electronic Systems (SPELS)MoscowRussia

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