Model of the diode-connected GaAs Schottky-gate field-effect transistor
A model of the diode-connected GaAs Schottky-gate field-effect transistor (SFET) has been proposed. The SFETs with uniform and δ-doped channels are considered. The model accounts for the distributive character of the channel’s resistive regions under the gate and the passive contact regions between the gate and the ohmic contact. Based on the results obtained, the equivalent circuit of the diode-connected SFET, which accounts for the current displacement effect, and the method to measure its parameters have been suggested. The model may be used for heterostructure FETs with high electron mobility in the channel (HEMT).
Unable to display preview. Download preview PDF.
- 1.Gorbatsevich, A.A., Nalbandov, B.G, Starosel’skii, V.I., and Shmelev, S.S., Semiconductor Heterostructures and Devices on Their Base, in Nanotekhnologiya v elektronike (Nanotechnology in Electronics), Yu.A. Chaplygin, Ed., Moscow: Tekhnosfera, 2005, pp. 172–242.Google Scholar
- 2.Shur, M., GaAs Devices and Circuits, New York: Plenum Publ. Corp., 1987.Google Scholar
- 3.Sugeta, N., Ida, M., and Ushida, M., Microwave Performance of Schottky Barrier Gate FET’s, Rev. Electr. Commun. Labs., 1975, vol. 23, no. 11–12, pp. 1182–1192.Google Scholar
- 5.Burzin, S.B., Starosel’skii, V.I., and Shmelev, S.S., Investigation of Reverse I–V Characteristics of the Heterostructure-Based Schottky-Barrier Gate Field-Effect Transistor, Mikroelektronika [Russ. Microelectronics (Engl. Transl.)] (in press).Google Scholar
- 6.Stratton, R., Tunneling in Schottky-Barrier Rectifiers, in Tunneling Phenomena in Solids, Burstein, E. and Lundqvist, S., Eds., New York: Plenum, 1969.Google Scholar