Laser Physics

, Volume 22, Issue 7, pp 1229–1234

Analysis of using femtosecond laser scanning system to impurity-induced disordering of InGaAsP quantum wells

  • Chih-Hua Hsieh
  • Jeng-Ywan Jeng
  • San-Liang Lee
  • Yen-Ting Pan
Interaction of Laser Radiation with Matter

DOI: 10.1134/S1054660X1207002X

Cite this article as:
Hsieh, CH., Jeng, JY., Lee, SL. et al. Laser Phys. (2012) 22: 1229. doi:10.1134/S1054660X1207002X

Abstract

This study is the first to demonstrate the selectivity quantum well intermixing process by using a femtosecond laser scanning-induced disordering technique. The advantages of the femtosecond laser are photochemical machining and the two-photon absorption mechanism. The femtosecond laser system can convert writing into the scan to create a nanostructure by adjusting the lens. The effect of power on the band gap shift during laser scanning was investigated. The band gap shift was small and unstable without the heating substrate. A wavelength shift higher than 77.3 nm for the InGaAsP MQW material was obtained at elevated temperatures.

Copyright information

© Pleiades Publishing, Ltd. 2012

Authors and Affiliations

  • Chih-Hua Hsieh
    • 1
  • Jeng-Ywan Jeng
    • 1
  • San-Liang Lee
    • 2
  • Yen-Ting Pan
    • 3
  1. 1.Department of Mechanical EngineeringNational Taiwan University of Science and TechnologyTaipeiTaiwan
  2. 2.Department of Electronic Engineering and Intelligent Building Research CenterNational Taiwan University of Science and TechnologyTaipeiTaiwan
  3. 3.Department of Opto-Mechatronics Technology CenterNational Taiwan University of Science and TechnologyTaipeiTaiwan

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