Laser Physics

, Volume 16, Issue 3, pp 441–446 | Cite as

Properties of (InGa)As/GaAs QW (λ ≈ 1.2 µm) facet-coated edge emitting diode laser

  • T. Gühne
  • V. Gottschalch
  • G. Leibiger
  • H. Herrnberger
  • J. Kovác
  • J. KovácJr.
  • R. Schmidt-Grund
  • B. Rheinländer
  • D. Pudis
Semiconductor Lasers

Abstract

In this paper, we report on the design and optical properties of laser diodes with an emission wave-length of ∼1170 nm based on an (InGa)As/GaAs double quantum well active layer. The back and front facet of the laser diodes were coated with SiOx dielectric films that influence the output optical power by enhancing or lowering the facet reflectivity. The measurements show improvement of the facet-coated laser diode properties in the threshold-current-density reduction along with light output power enhancement. Furthermore, a narrow far field pattern and high side mode suppression have been observed.

PACS numbers

42.55.Px 81.15.Kk 73.40.Kp 78.66.Jg 

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Copyright information

© MAIK “Nauka/Interperiodica” 2006

Authors and Affiliations

  • T. Gühne
    • 1
  • V. Gottschalch
    • 1
  • G. Leibiger
    • 1
  • H. Herrnberger
    • 1
  • J. Kovác
    • 2
  • J. KovácJr.
    • 2
    • 3
  • R. Schmidt-Grund
    • 4
  • B. Rheinländer
    • 4
  • D. Pudis
    • 5
  1. 1.Institute of Inorganic Chemistry, Semiconductor Chemistry groupUniversity of LepzigLeipzigGermany
  2. 2.Department of MicroelectronicsSlovak Technical UniversityBratislavaSlovakia
  3. 3.International Laser CenterBratislavaSlovakia
  4. 4.Institute of Experimental Physics II, Semiconductor Physics groupUniversity of LeipzigLeipzigGermany
  5. 5.Department of PhysicsUniversity of ŽilinaŽilinaSlovakia

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