Electrophysical Properties of Polycrystalline CuIn0.95Ga0.05Se2 Films
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Polycrystalline CuIn0.95Ga0.05Se2 films are obtained by a two-step procedure of the controlled selenization of intermetallic CuIn0.95Ga0.05 layers. The effect of the selenization temperature and the selenized intermetallic-film thickness on the structure and electrophysical properties of the formed selenide films is studied. With an increase in the selenization temperature, the degree of imperfection of the polycrystalline films is shown to decrease and the efficiency of Ga incorporation into the crystal lattice is shown to increase. Based on the results of studying the electrophysical properties of synthesized samples, the nature of the microstructure effect on the current-transfer mechanisms in polycrystalline CuIn0.95Ga0.05Se2 films is discussed.
Keywords:selenide film electroconductivity stoichiometry structure activation energy
The work was supported by the Ministry of Science and Education of the Russian Federation within State Contracts of the Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences and the Federal Scientific Research Center “Crystallography and Photonics” using their facilities for growth and characterization of the films and by the Russian Foundation for Basic Research (project No. 18-29-12 099 mk) for the study of the electrophysical properties of the films.