Composition and Structure of a Nanofilm Multilayer System of the SiO2/Si/CoSi2/Si(111) Type Obtained via Ion Implantation
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A SiO2/Si/CoSi2/Si(111) heterostructure is synthesized via successive Co+- and O 2 + -ion implantation into silicon followed by annealing. The optimal implantation and annealing conditions needed to obtain such a structure are determined. It is demonstrated that CoSi2 and SiО2 layers formed in the surface region are single- and polycrystalline, respectively.
Keywordsnanoscale phases ion implantation multilayer system heterostructure band-gap width electron spectroscopy annealing
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- 3.A. A. Altukhov and V. V. Zhirnov, in Proc. 2nd All-Union Interdisciplinary Conference “Thin Films for Electronics” (Izhevsk, Moscow, 1991), p.15.Google Scholar