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Composition and Structure of a Nanofilm Multilayer System of the SiO2/Si/CoSi2/Si(111) Type Obtained via Ion Implantation

  • Y. S. Ergashov
  • B. E. Umirzakov
Article
  • 9 Downloads

Abstract

A SiO2/Si/CoSi2/Si(111) heterostructure is synthesized via successive Co+- and O 2 + -ion implantation into silicon followed by annealing. The optimal implantation and annealing conditions needed to obtain such a structure are determined. It is demonstrated that CoSi2 and SiО2 layers formed in the surface region are single- and polycrystalline, respectively.

Keywords

nanoscale phases ion implantation multilayer system heterostructure band-gap width electron spectroscopy annealing 

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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  1. 1.Tashkent State Technical UniversityTashkentUzbekistan

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