Study of silicon implanted with zinc and oxygen ions via Rutherford backscattering spectroscopy
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The structural features and dopant profiles of a Si surface layer implanted with Zn+ and O+ ions are studied via Rutherford backscattering spectroscopy based on the analysis of He2+-ion spectra with the use of the channeling technique. The doping-impurity redistribution is analyzed upon the formation of zinc-oxide nanoparticles. The sample surface morphology is examined by means of atomic-force microscopy and scanning electron microscopy under secondary-electron emission conditions. X-ray phase analysis of the implanted layers is carried out.
KeywordsSurface Investigation Neutron Technique Radiation Defect Implantation Dose Radiation Induce Defect
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