Study of silicon implanted with zinc and oxygen ions via Rutherford backscattering spectroscopy

  • V. V. Privezentsev
  • V. S. Kulikauskas
  • V. V. Zatekin
  • D. V. Petrov
  • A. V. Makunin
  • A. A. Shemukhin
  • A. V. Lutzau
  • A. V. Putrik


The structural features and dopant profiles of a Si surface layer implanted with Zn+ and O+ ions are studied via Rutherford backscattering spectroscopy based on the analysis of He2+-ion spectra with the use of the channeling technique. The doping-impurity redistribution is analyzed upon the formation of zinc-oxide nanoparticles. The sample surface morphology is examined by means of atomic-force microscopy and scanning electron microscopy under secondary-electron emission conditions. X-ray phase analysis of the implanted layers is carried out.


Surface Investigation Neutron Technique Radiation Defect Implantation Dose Radiation Induce Defect 
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Copyright information

© Pleiades Publishing, Ltd. 2014

Authors and Affiliations

  • V. V. Privezentsev
    • 1
  • V. S. Kulikauskas
    • 2
  • V. V. Zatekin
    • 2
  • D. V. Petrov
    • 2
  • A. V. Makunin
    • 2
  • A. A. Shemukhin
    • 2
  • A. V. Lutzau
    • 3
  • A. V. Putrik
    • 4
  1. 1.Institute of Physics and TechnologyRussian Academy of SciencesMoscowRussia
  2. 2.Skobeltsyn Institute of Nuclear PhysicsMoscow State UniversityMoscowRussia
  3. 3.NPP PulsarMoscowRussia
  4. 4.Ural Federal UniversityYekaterinburgRussia

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