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Study of solar silicon multicrystals by SEM and EPMA methods

  • L. A. Pavlova
  • A. I. Nepomnyashchikh
  • S. M. Peshcherova
Article

Abstract

Multisilicon crystals grown from refined metallurgical silicon are studied by scanning electron microscopy (SEM) and electron probe microanalysis (EPMA). The varieties of intergranular boundaries are revealed. Impurities are found to be contained in inclusions in multisilicon. The intergranular boundaries contain no impurities, and they do not concentrate the elements present in multisilicon. It is proved experimentally that, in the homogeneous areas of the crystal the lifetime of minor charge carriers is maximum, whereas its minimum value corresponds to the areas with numerous intergranular boundaries.

Keywords

Surface Investigation Neutron Technique Electron Probe Microanalysis Backscatter Electron Image Electrophysical Property 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Pleiades Publishing, Ltd. 2011

Authors and Affiliations

  • L. A. Pavlova
    • 1
  • A. I. Nepomnyashchikh
    • 1
  • S. M. Peshcherova
    • 1
  1. 1.Siberian BranchVinogradov Institute of GeochemistryIrkutskRussia

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