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Temperature behavior of the photovoltaic and pyroelectric responses of Sn2P2S6 semiconductor ferroelectric films

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Abstract

The electric response of Sn2P2S6 semiconductor ferroelectric films to focused laser radiation (λ = 6328 Å) with a modulation frequency of 24 Hz is studied experimentally. It is shown that the signal involves an initial spike of current (an unsteady component) followed by the relaxation decrease to a certain value (a quasisteady component). The most significant changes in the shape and amplitude of the film response is observed near the Sn2P2S6 monocrystal phase transition point of T C = 66°C. The behavior of the unsteady component of the response is related to the behavior of the spontaneous polarization. This component decreases with increasing temperature. The quasi-steady component reaches its maximum at T = C C. It is revealed that the behavior of relaxation processes corresponding to the decreasing response undergoes a change near the phase transition temperature.

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Authors and Affiliations

  1. Tver State University, Tver, Russia

    A. A. Bogomolov, A. V. Solnyshkin & D. A. Kiselev

  2. Physics Research Institute, Rostov State University, Rostov-on-Don, Russia

    I. P. Raevskii, V. Yu. Shonov & D. N. Sandzhiev

Authors
  1. A. A. Bogomolov
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  2. A. V. Solnyshkin
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  3. D. A. Kiselev
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  4. I. P. Raevskii
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  5. V. Yu. Shonov
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  6. D. N. Sandzhiev
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Original Russian Text © A.A. Bogomolov, A.V. Solnyshkin, D.A. Kiselev, I.P. Raevskii, V.Yu. Shonov, D.N. Sandzhiev, 2008, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, No. 6, pp. 98–103.

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Bogomolov, A.A., Solnyshkin, A.V., Kiselev, D.A. et al. Temperature behavior of the photovoltaic and pyroelectric responses of Sn2P2S6 semiconductor ferroelectric films. J. Surf. Investig. 2, 496–501 (2008). https://doi.org/10.1134/S1027451008030294

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  • DOI: https://doi.org/10.1134/S1027451008030294

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